Structural Support Layer for Selective Wafer Transfer Under Laser Exposure
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Solution Overview
Problem
Current layer transfer techniques in semiconductor manufacturing require transferring entire layers, leading to increased costs and process complexity due to the need to etch away unneeded portions, and pick-and-place methods are costly and challenging for small or irregularly shaped chiplets.
Innovation Solution
Selective layer transfer techniques that allow for the transfer of specific areas of a layer between substrates using a patterned bonding template and selective release technologies, enabling the reuse of donor substrates and eliminating the need for post-transfer etching or thinning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If blanket laser exposure is used to transfer entire layers, then transfer speed is improved, but manufacturing precision deteriorates due to damage to selective transfer layers
Solution Approach 1:
The patent segments the laser exposure process into two distinct stages: (1) blanket exposure of the donor substrate to weaken the release layer across the entire surface, and (2) selective exposure of only the target areas on the receiver substrate. This segmentation allows the bulk transfer to proceed rapidly while protecting the selective transfer layer from damage in non-target areas.
Solution Approach 2:
The patent applies preliminary action by performing blanket laser exposure on the donor substrate before the actual selective transfer. This preliminary exposure weakens the release layer across the entire donor substrate, preparing it for transfer while allowing subsequent selective bonding and transfer only in the desired areas, thus protecting the selective transfer layer from unnecessary laser damage.
2Manufacturing precision
If selective release technologies are used to transfer specific areas, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The patent merges multiple functions into a unified selective transfer process: the release layer provides both the bonding interface for transfer and the laser-absorbing layer for selective release; the receiver substrate serves as both the target for selective transfer and the platform for patterned adhesive application. This merging reduces the need for additional separate components and processes.
Solution Approach 2:
The release layer is designed with multi-functionality: it serves as the bonding interface between donor and receiver substrates, acts as the laser-absorbing layer for selective release, and provides the structural framework for the selective transfer process. This universal component eliminates the need for separate specialized layers for each function.
3Manufacturing precision
If patterned adhesive areas are used on receiver substrate, then selective transfer precision is improved, but ease of manufacture deteriorates
Solution Approach 1:
The patent applies local quality by creating patterned adhesive areas with different adhesive properties in different locations on the receiver substrate. The adhesive layer has high adhesion in target areas and low or no adhesion in non-target areas, enabling selective bonding only where needed. This local differentiation achieves precise selective transfer while using a relatively simple patterned adhesive approach.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Reduces costs and process complexity by allowing selective transfer of layer portions, enabling thinner and more complex IC packages with minimal chipping and handling challenges, and supports transfers of small or irregularly shaped dies.
Implementation Method 1
portions of the release layer are selectively removed using laser ablation
Implementation Method 2
A structural support layer is formed over the selective transfer layer to provide support to the selective transfer layer during laser exposure and prevent cracking and breakage
Data Source
AI summary
An embodiment discloses a method comprising receiving a substrate comprising a first layer, a second layer over the first layer, and a third layer over the second layer, the second layer comprising at least one integrated circuit (IC) component, the third layer comprising at least one dielectric material; and using a laser to weaken the first layer to facilitate separation of the second layer from the substrate.