Support Substrate Sacrificial Layer for Arcing and Wear Control

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Solution Overview

Problem

The support substrate in semiconductor storage devices wears down during repeated use, especially when peeling off from the semiconductor substrate, and the formation of plugs for plasma etching accelerates this wear, leading to increased manufacturing costs and reduced reuse cycles.

Innovation Solution

A support substrate with a conductive substrate, a thin insulating layer, a conductive sacrificial layer, and plugs penetrating the insulating layer to connect the substrate and sacrificial layer, which absorbs stress and reduces wear by providing a path for electrical conduction and charge release during plasma etching, thereby extending the reuse cycles.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If plugs are formed on the support substrate to suppress arcing during plasma etching, then arcing is suppressed, but wear of the support substrate is accelerated

Engineering Contradiction:
Improvearcing suppressionVSAvoidsupport substrate reuse cycles
Core Design Contradiction:
ReliabilityVSDuration of action of stationary object

Solution Approach 1:

The patent introduces a sacrificial layer as an intermediary between the support substrate and the plugs. This sacrificial layer absorbs the wear and damage during peeling and plasma etching processes, protecting the support substrate while still allowing the plugs to function in suppressing arcing during memory pillar formation.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The sacrificial layer is designed as a consumable component that is intentionally worn away or removed during the manufacturing process. By making this layer disposable and replaceable, the expensive support substrate is protected from wear, enabling its repeated reuse across multiple manufacturing cycles.

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

2Ease of manufacture

If the support substrate is repeatedly reused to reduce manufacturing costs, then manufacturing cost decreases, but wear accumulates leading to reduced performance

Engineering Contradiction:
Improvemanufacturing costVSAvoidsubstrate performance
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent segments the support substrate system into multiple functional layers: the reusable support substrate, the sacrificial layer, and the plug structures. This segmentation allows the support substrate to be separated from the wear-prone elements, enabling its repeated reuse while the sacrificial layer is replaced to maintain performance.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The sacrificial layer is discarded after serving its protective function during the manufacturing process. The support substrate is recovered and reused for subsequent manufacturing cycles, while the sacrificial layer is replenished. This discarding and recovering strategy maintains manufacturing cost efficiency while preserving substrate performance.

Inventive Principle:
Principle #34Discarding and recovering

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively suppresses wear and extends the reuse cycles of the support substrate, reducing manufacturing costs by absorbing stress and preventing arcing during plasma etching, while maintaining efficient electrical conduction.

Implementation Method 1

a first insulating layer disposed on the substrate; a first layer having conductivity and disposed on the first insulating layer

Methodology Applied
Scientific EffectStress absorption:

Implementation Method 2

a plurality of first plugs penetrating the first insulating layer and connecting the substrate and the first layer

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS20240290716A1Support substrate, manufacturing method of support substrate, and manufacturing method of semiconductor storage device
Publication Date: 2024.08.29 KIOXIA CORP
  • US20240290716A1 patent drawing
  • US20240290716A1 patent drawing
  • US20240290716A1 patent drawing

AI summary

A support substrate according to an embodiment includes: a substrate having conductivity; a first insulating layer disposed on the substrate; a first layer having conductivity and disposed on the first insulating layer; a second insulating layer disposed on the first layer; a second layer having conductivity and disposed on the second insulating layer; a plurality of first plugs penetrating the first insulating layer and connecting the substrate and the first layer; and a plurality of second plugs penetrating the second insulating layer and connecting the first layer and the second layer.