Supported Carbon Catalyst via Precursor Activation

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Solution Overview

Problem

It is challenging to obtain a carbon layer with catalytic activity on the surface of relatively pure porous silicon dioxide with less impurity metal ions, as minimal carbon deposit formation occurs at low temperatures, making it difficult to create an effective supported carbon catalyst.

Innovation Solution

A method involving chemical vapor deposition, where an organic silicon source is contacted with a silicon oxide-based material to form a precursor, followed by exposure to an organic carbon source, reducing temperature and energy consumption, and allowing for the deposition of a carbon layer on the silica surface, thereby creating a supported carbon catalyst.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If chemical vapor deposition is performed on relatively pure porous silicon dioxide at low temperature, then the catalyst maintains high purity with less impurity metal ions, but carbon deposit formation is minimal making it difficult to obtain sufficient catalytic activity

Engineering Contradiction:
Improvecatalytic activityVSAvoidcarbon layer amount
Core Design Contradiction:
ReliabilityVSQuantity of substance

Solution Approach 1:

The patent introduces a preliminary activation step where silicon oxide surface groups are activated before carbon deposition. This creates reactive sites on the silicon oxide surface that facilitate subsequent carbon layer formation at lower temperatures, resolving the contradiction between maintaining catalyst purity and achieving sufficient carbon deposit for catalytic activity

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent changes the chemical state of the silicon oxide surface through activation treatment, transforming inert surface groups into reactive species. This parameter change enables carbon deposition under milder conditions, allowing sufficient carbon layer formation without requiring high temperatures that would introduce impurities

Inventive Principle:
Principle #35Parameter changes

2Quantity of substance

If conventional methods are used to deposit carbon on silicon oxide, then sufficient carbon layer can be obtained, but temperature and energy consumption are high increasing catalyst cost

Engineering Contradiction:
Improvecarbon layer amountVSAvoidenergy consumption
Core Design Contradiction:
Quantity of substanceVSUse of energy by stationary object

Solution Approach 1:

By activating the silicon oxide surface beforehand, the patent creates favorable conditions for carbon deposition that reduce the energy barrier. This preliminary action allows the carbon layer to form at lower temperatures, significantly reducing energy consumption while still achieving sufficient carbon layer amount

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The activated silicon oxide surface groups act as intermediaries that facilitate carbon deposition. These reactive surface species mediate between the carbon source and the silicon oxide support, enabling low-temperature carbon layer formation without requiring high energy input

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method effectively reduces the cost of the catalyst and enhances the catalytic activity by allowing a sufficient carbon material to be supported on the catalyst carrier, achieving high selectivity in reactions such as the cracking of 1,2-dichloroethane to produce chloroethylene with selectivity over 99%.

Implementation Method 1

A method involving chemical vapor deposition, where an organic silicon source is contacted with a silicon oxide-based material to form a precursor

Methodology Applied
Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Implementation Method 2

contacting the precursor with a gas containing an organic carbon source to obtain the supported carbon catalyst

Methodology Applied
Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Data Source

PatentUS11305263B2Method for preparing a supported carbon catalyst, supported carbon catalyst and use thereof
Publication Date: 2022.04.19 TAIWAN SOKOU INDS KOFUN YUUGENKOUSHI
  • US11305263B2 patent drawing
  • US11305263B2 patent drawing
  • US11305263B2 patent drawing

AI summary

A method for preparing a supported carbon catalyst, the method includes at least the following steps: contacting a gas containing an organic silicon source with a silicon oxide-based material to obtain a precursor; contacting the precursor with a gas containing an organic carbon source to obtain the supported carbon catalyst. The temperature and energy consumption of the chemical vapor deposition of heteroatom-containing carbon material on silica-based materials can be greatly reduced in this method, and the cost of the catalyst can be effectively reduced.