Supporter Pattern Layout for Stable High-Aspect Ratio Capacitors
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In the manufacturing of semiconductor devices, ensuring uniform contact areas between supporter patterns and lower electrodes is challenging, particularly in highly integrated and miniaturized capacitors where lower electrodes with high aspect ratios are used.
Innovation Solution
A method of manufacturing a semiconductor device involves sequentially stacking a mold layer and a supporter layer on a substrate, forming capacitor holes, and filling them with lower electrodes arranged in a specific direction. A supporter mask pattern is formed, and using this pattern, supporter holes are patterned in the supporter layer to create uniform contact areas with the lower electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If lower electrodes with high aspect ratios are used to obtain specific capacitances in fine patterns, then capacitor miniaturization is achieved, but the lower electrodes are prone to collapsing during the process
Solution Approach 1:
The supporter layer is segmented into multiple supporter patterns positioned at specific locations around each lower electrode. These segmented supporter patterns provide distributed support points along the sidewalls of the high aspect ratio lower electrodes, preventing collapse while enabling capacitor miniaturization
Solution Approach 2:
A supporter layer is introduced as an intermediary structure between the lower electrodes and the surrounding environment. This intermediary layer provides mechanical support to the high aspect ratio lower electrodes through patterned supporter structures, preventing collapse during processing while allowing the lower electrodes to maintain their miniaturized dimensions
2Reliability
If supporter patterns are formed to prevent lower electrode collapse, then electrode stability is improved, but non-uniform contact areas between supporter patterns and lower electrodes occur
Solution Approach 1:
The supporter patterns are designed with locally optimized geometries where the contact width and length are specifically tailored to match the dimensions of adjacent lower electrodes. This local quality adjustment ensures uniform contact areas between supporter patterns and lower electrodes, improving manufacturing precision while maintaining electrode stability
Solution Approach 2:
The dimensions of supporter patterns (contact width, contact length, spacing) are precisely controlled and adjusted as key parameters to achieve uniform contact areas. By optimizing these geometric parameters, the invention ensures consistent electrical and mechanical contact between supporter patterns and lower electrodes across the entire substrate
Data Source
AI summary
A method of manufacturing a semiconductor device includes sequentially stacking a mold layer and a supporter layer on a substrate, forming a plurality of capacitor holes passing through the mold layer and supporter layer, forming a plurality of lower electrodes filling the capacitor holes, forming a supporter mask pattern having a plurality of mask holes on the supporter layer and the lower electrodes, and forming a plurality of supporter holes by patterning the supporter layer. Each of the plurality of lower electrodes has a pillar shape, and each of the mask holes is between four adjacent lower electrodes and has a circular shape.