Supra-atmospheric CVD for Seamless Semiconductor Gapfill
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor manufacturing processes using chemical vapor deposition at sub-atmospheric pressure result in seams between features, leading to decreased throughput and potential device failure due to uneven deposition rates and seam formation.
Innovation Solution
The method involves performing chemical vapor deposition at supra-atmospheric pressures greater than 1 bar to fill features and seams on semiconductor substrates, using silicon-containing or carbon-containing precursors to form seamless gap fill layers, thereby ensuring conformal film growth and seam healing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If chemical vapor deposition is performed at sub-atmospheric pressure, then deposition can be achieved, but seams form between features due to uneven deposition rates
Solution Approach 1:
The patent changes the pressure parameter from sub-atmospheric to supra-atmospheric (greater than 1 bar) to resolve the contradiction. This parameter change fundamentally alters the deposition mechanism, enabling enhanced diffusion that eliminates seams while maintaining uniform deposition across features of varying sizes.
Solution Approach 2:
The patent replaces the conventional CVD mechanical deposition process with an enhanced diffusion process operating at supra-atmospheric pressure. This substitution changes the fundamental mechanism from pressure-driven deposition to diffusion-driven filling, which naturally eliminates seams by allowing material to diffuse into all features uniformly.
2Productivity
If conventional CVD is used at sub-atmospheric pressure, then film deposition occurs, but throughput decreases due to seam formation and subsequent failure
Solution Approach 1:
By changing the pressure parameter to supra-atmospheric conditions, the patent simultaneously improves both throughput and device success rate. The enhanced diffusion process eliminates seams that would otherwise cause failure, while the efficient filling mechanism increases deposition speed and throughput.
3Manufacturing precision
If features are filled using conventional methods, then gapfilling occurs, but seams open up during post-curing processes
Solution Approach 1:
The patent performs preliminary gapfilling at supra-atmospheric pressure before post-curing processes. The enhanced diffusion process creates a seamless film structure during the gapfilling step, which prevents seam formation and subsequent opening during later curing operations. This preliminary action with optimized parameters ensures long-term stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables seam-free gapfilling and seam healing, enhancing the robustness and performance of semiconductor devices by maintaining film conformity and preventing seam formation during post-curing processes.
Implementation Method 1
chemical vapor deposition (CVD) under a sub-atmospheric pressure is utilized
Implementation Method 2
enhanced diffusion process
Data Source
AI summary
Embodiments described herein relate to methods of seam-free gapfilling and seam healing that can be carried out using a chamber operable to maintain a supra-atmospheric pressure (e.g., a pressure greater than atmospheric pressure). One embodiment includes positioning a substrate having one or more features formed in a surface of the substrate in a process chamber and exposing the one or more features of the substrate to at least one precursor at a pressure of about 1 bar or greater. Another embodiment includes positioning a substrate having one or more features formed in a surface of the substrate in a process chamber. Each of the one or more features has seams of a material. The seams of the material are exposed to at least one precursor at a pressure of about 1 bar or greater.