Differential Surface Charging for Selective Plasma Deposition
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Solution Overview
Problem
Conventional selective deposition methods are lengthy, chemistry-dependent, and require etching, limiting their applicability and efficiency, especially for advanced microelectronic device fabrication where feature sizes are reduced and device density increases, leading to issues like resist budget limitations and stochastically-driven irregularities.
Innovation Solution
A method involving differential surface charging using a remote electron source to negatively charge patterned layer surfaces and a remote ion source to selectively deposit material by attracting positive ions, independent of material composition and surface structure, without etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional selective deposition processes are used, then material can be deposited on desired surfaces, but the processes are time-consuming and require lengthy multistep procedures
Solution Approach 1:
The patent replaces conventional chemical-based selective deposition mechanisms with a physical field-based approach using plasma and electric fields. By applying radio frequency power to generate plasma and using biased electrodes to control ion/electron flux, the system achieves selective deposition through physical means rather than lengthy chemical processes, reducing both time and procedural complexity
Solution Approach 2:
The patent utilizes parameter changes in plasma physics to achieve selective deposition. By adjusting power levels, gas pressure, and electrode bias voltages, the system can control the flux and energy of reactive species to different surfaces. This allows selective deposition on patterned surfaces versus planar surfaces through parameter optimization rather than multiple process steps
2Adaptability or versatility
If conventional selective deposition is used, then deposition can occur on certain surfaces, but the process depends on material composition and surface structure
Solution Approach 1:
The patent creates a universal deposition system that works across different material compositions and surface structures. The plasma-based approach with controllable ion and electron flux can deposit materials on various surface types (patterned, planar, different compositions) by adjusting power and bias parameters, making the system adaptable rather than material-specific
Solution Approach 2:
The patent applies local quality by creating different plasma conditions at different locations. Through biased electrodes, the system generates localized variations in ion and electron flux, allowing selective deposition on specific regions (e.g., patterned areas) while controlling deposition on other regions. This spatial control achieves precision without material dependency
3Productivity
If photoresist features are reduced in size, then device density increases, but feature stability decreases and interactions between features increase
Solution Approach 1:
The patent introduces plasma as an intermediary medium to modify photoresist features. The controlled flux of reactive species from the plasma can smooth and strengthen small photoresist features, improving their mechanical stability and reducing interactions between adjacent features, thereby enabling higher device density without sacrificing reliability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances resist budget, smooths mask features, and addresses roughness concerns during pattern transfer, facilitating improved process transfer for smaller features by selectively depositing a variety of materials in situ during etching processes.
Implementation Method 1
extracting electrons from a remote electron source to negatively charge upper surfaces of a patterned layer with the electrons
Implementation Method 2
extracting positive ions from a remote ion source to selectively deposit a material on the upper surfaces by attracting the positive ions to the electrons of the upper surfaces
Implementation Method 3
selectively deposit a material on the upper surfaces by attracting the positive ions to the electrons of the upper surfaces
Implementation Method 4
applying source power having a first power level to generate plasma including the electrons in a remote plasma chamber
Data Source
AI summary
A method includes extracting electrons from a remote electron source to negatively charge upper surfaces of a patterned layer with the electrons, and extracting positive ions from a remote ion source to selectively deposit a material on the upper surfaces by attracting the positive ions to the electrons of the upper surfaces. The upper surfaces may be negatively charged by concurrently applying a positive bias at the patterned layer and applying source power with a lower power level to generate plasma. The material may be selectively deposited by concurrently applying a negative bias at the patterned layer and applying source power with a higher power level to plasma. An extraction grid may separate the patterned layer from the plasma. The extraction grid may be electrically floating or coupled to a ground potential during either of the electron extraction step or the ion extraction step.