Surface-Doped Organic Semiconductor Film for Stable Strain Sensing
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Solution Overview
Problem
Existing organic semiconductor strain sensors and vibration sensors face challenges in achieving a simple construction while obtaining a desired resistance, as they often require complex structures and may disrupt the crystal structure of the organic semiconductor film.
Innovation Solution
The solution involves forming a doped layer on the surface of an organic semiconductor film made from single crystal organic semiconductors, which prevents the crystal structure from breaking and allows for the achievement of a desired resistance with a simple construction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a doped layer is formed on the surface of the organic semiconductor film, then the desired resistance can be achieved with simple construction, but the crystal structure may be disrupted
Solution Approach 1:
The patent applies local quality by forming a doped layer only on the surface of the organic semiconductor film rather than doping the entire bulk. This localized doping approach modifies the electrical properties at the surface where charge injection occurs, achieving the desired resistance without disrupting the crystal structure throughout the entire material. The surface-specific modification allows simple construction while preserving overall structural integrity.
2Measurement precision
If the organic semiconductor film is used as a strain sensor by detecting carrier mobility change, then strain detection is achieved, but the construction becomes complex and desired resistance is difficult to obtain
Solution Approach 1:
The patent applies parameter changes by modifying the electrical resistance parameter through surface doping rather than changing the physical construction complexity. By controlling the doping concentration and depth in the surface layer, the resistance can be precisely tuned to achieve desired values while maintaining the simple film structure. This allows strain detection functionality to be achieved with optimized electrical properties without adding constructional complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of organic semiconductor elements with a simple construction that can achieve a desired resistance, while maintaining the stability and detection sensitivity of the organic semiconductor film, even under high-speed vibrations.
Implementation Method 1
forming a doped layer in a surface of an organic semiconductor film formed from single crystal of an organic semiconductor
Implementation Method 2
When a stress compressing or stretching the organic semiconductor film acts on the film, a distance between molecules of the organic semiconductor is changed to cause the molecular vibration to change, so that the mobility of carriers of the organic semiconductor film is changed. The change of the carrier mobility is detected as, for example, a change of the resistance of the organic semiconductor film, detecting strain.
Data Source
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AI summary
Provided are an organic semiconductor element which is advantageous in that a desired resistance can be obtained from the element having a simple construction, a strain sensor, a vibration sensor, and a method for producing an organic semiconductor element. The vibration sensor includes an organic semiconductor element 14 formed on the surface of a substrate 12 having flexibility. The organic semiconductor element 14 includes an organic semiconductor film 24 which is a film formed from single crystal of an organic semiconductor, and a dopant film 25 formed on the surface of the organic semiconductor film 24. The dopant film 25 forms a charge transfer complex of the dopant constituting the dopant film and the organic semiconductor in the organic semiconductor film 24, forming a doped layer 26 having carriers injected into a surface of the organic semiconductor film 24.