Surface Electrode Layout to Prevent Gate Wiring Shorting
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor devices, the surface electrode is prone to sliding and short-circuiting with gate wirings, which degrades electrical characteristics due to its configuration over active and inactive regions.
Innovation Solution
A semiconductor device design featuring a first conductive member on the back surface and a second conductive member on the front surface, with the surface electrode extending over both active regions and an inter-inactive portion, reducing the likelihood of sliding and short-circuiting with gate wirings.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the surface electrode is configured to extend over active regions and inactive regions, then the electrical connection is improved, but the surface electrode becomes prone to sliding and short-circuiting with gate wirings
Solution Approach 1:
The surface electrode is divided into multiple segments: a first surface electrode portion extending over the first active region, a second surface electrode portion extending over the second active region, and an inter-inactive portion extending over the inactive region between them. This segmentation allows each portion to be independently positioned and connected, reducing the risk of sliding and short-circuiting while maintaining electrical connection.
Solution Approach 2:
The inter-inactive portion of the surface electrode acts as an intermediary element that bridges the first and second surface electrode portions. It is positioned over the inactive region, which serves as a buffer zone, preventing direct contact between the surface electrode and gate wirings while maintaining electrical continuity through the conductive inter-inactive portion.
2Reliability
If the surface electrode continuously extends over active regions and inter-inactive portion, then electrical performance is enhanced, but the complexity of preventing short-circuiting increases
Solution Approach 1:
Different portions of the surface electrode are assigned different functions: the first and second surface electrode portions provide electrical connection to active regions, while the inter-inactive portion provides isolation over the inactive region. This local differentiation of quality and function simplifies the overall design by allowing each portion to be optimized for its specific role.
Solution Approach 2:
The surface electrode structure utilizes the vertical dimension by extending through different layers: the inter-inactive portion extends from the front surface through the insulating film to the back surface, while the first and second surface electrode portions are positioned at different depths. This dimensional arrangement prevents short-circuiting by spatial separation while maintaining electrical connection.
Data Source
AI summary
A semiconductor device includes a semiconductor chip, first and second conductive members disposed on opposite sides of the semiconductor chip. The semiconductor chip includes a semiconductor substrate, a surface electrode and gate wirings. The semiconductor substrate has active regions formed with elements, and an inactive region not formed with an element. The inactive region includes an inter-inactive portion disposed between at least two active regions and an outer peripheral inactive portion disposed on an outer periphery of the at least two active regions. The surface electrode is disposed to continuously extend above the at least two active regions and the inter-inactive portion. The gate wirings are disposed above the inactive region, and include a first gate wiring disposed on an outer periphery of the surface electrode, and a second gate electrode disposed at a position facing the surface electrode.