Surface-Emitting Optoelectronic Chip With Oblique Beam-Deflecting Facets
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Solution Overview
Problem
There is a need for an optoelectronic semiconductor chip that can be manufactured efficiently, particularly one that utilizes III-V compound semiconductor materials for generating radiation in the spectral range of 350 nm to 600 nm, with efficient beam deflection capabilities and cost-effective production processes.
Innovation Solution
The optoelectronic semiconductor chip features a semiconductor layer sequence with active zones, including pn junctions and quantum well structures, oblique facets for beam deflection, and a configuration that allows for surface emission without the need for specific laser processes, incorporating Bragg mirrors and reflective coatings for enhanced performance and cost-effectiveness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If oblique facets are used for beam deflection, then beam deflection efficiency is improved, but manufacturing complexity increases
Solution Approach 1:
The patent combines the beam deflection function with the semiconductor chip structure itself by forming oblique facets directly on the chip substrate, rather than adding separate deflection components. This integration achieves efficient beam deflection while reducing overall device complexity and manufacturing steps.
Solution Approach 2:
The patent introduces oblique facets that create three-dimensional light path control within the planar chip structure. By utilizing angular geometry in the vertical dimension, the design achieves effective beam deflection without requiring additional lateral space or complex multi-component assemblies.
2Ease of operation
If electrodes are located on the same mounting side as oblique facets, then electrical contacting is simplified, but radiation emission is blocked
Solution Approach 1:
The mounting side is segmented into distinct functional zones: one area for electrode placement and another area for oblique facet radiation emission. This spatial segmentation allows both electrodes and facets to coexist on the same side without interference, enabling simplified electrical mounting while maintaining radiation emission capability.
Solution Approach 2:
Different regions of the mounting side are assigned different functional properties: electrode contact areas are optimized for electrical conductivity and mounting, while facet areas are optimized for light emission. This local differentiation allows both functions to perform optimally simultaneously on the same side.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables efficient radiation generation and beam deflection, facilitating cost-effective production and diverse applications such as wavelength conversion, automotive lighting, and general lighting, while maintaining high synergies with LED package technology.
Implementation Method 1
The semiconductor layer sequence has at least one oblique facet in the region of the active zone, which facet is configured for beam deflection of the radiation. A beam deflection angle is, for example, at least 45° or at least 60° or at least 85° and/or at most 135° or at most 120° or at most 95°. In particular, a 90° beam deflection is performed by the oblique facet.
Implementation Method 2
The at least one active zone contains in particular at least one pn junction and/or at least one quantum well structure. The semiconductor layer sequence is preferably based on a III-V compound semiconductor material. In particular, radiation generated by the active zone during operation is in the spectral range between 350 nm and 600 nm inclusive.
Implementation Method 3
incorporating Bragg mirrors and reflective coatings for enhanced performance and cost-effectiveness
Data Source
AI summary
In at least one embodiment, the optoelectronic semiconductor chip including a semiconductor layer sequence, in which there is at least one active zone for generating radiation; and a first electrode and a second electrode, with which the semiconductor layer sequence is in electrical contact; wherein the semiconductor layer sequence has, in the region of the active zone, at least one obliquely extending facet designed for a beam deflection of the radiation; wherein the first electrode and the second electrode are on the same mounting side of the semiconductor layer sequence as the at least one obliquely extending facet, and the mounting side is a main side of the semiconductor layer sequence; and wherein the radiation is coupled out on an emission side of the semiconductor layer sequence opposite from the mounting side.