Surface Emitting Laser Complex Refractive Index Structure
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional surface light emitting semiconductor laser elements face challenges in producing stable laser light in a single-peak transverse mode due to small current confinement structure sizes, leading to production errors, poor wafer uniformity, increased resistance, and degraded high-frequency properties, making it difficult to achieve high output and efficient light emission.
Innovation Solution
A surface light emitting semiconductor laser element with a complex refractive index distribution structure on the upper surface of the mesa post, comprising a contact layer with a first opening exposing the upper DBR, a metal film electrode with a second opening inside the first, and an insulation film with a third opening outside, creating a combined optical system that acts as a convex and concave lens to selectively oscillate in a single-peak transverse mode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If the current confinement structure size is reduced to achieve single-peak transverse mode emission, then the transverse mode purity is improved, but the manufacturing precision deteriorates due to production errors and poor wafer uniformity
Solution Approach 1:
The patent changes the geometric parameters of the current confinement structure, specifically setting the diameter to 4 μm or less, which enables single-peak transverse mode emission while maintaining manufacturability through precise parameter control
Solution Approach 2:
The patent creates a localized current confinement structure with specific dimensional characteristics (diameter ≤4 μm) that provides different optical modes confinement properties compared to the surrounding areas, enabling single-peak mode emission without affecting the entire wafer uniformity
2Stability of the object's composition
If the current confinement structure size is reduced to achieve single-peak transverse mode emission, then the transverse mode purity is improved, but the electrical resistance increases
Solution Approach 1:
The patent optimizes the dimensional parameters of the current confinement structure (diameter ≤4 μm) to achieve a balance between optical mode purity and electrical resistance, ensuring both single-peak mode emission and acceptable electrical performance
3Stability of the object's composition
If the current confinement structure size is reduced to achieve single-peak transverse mode emission, then the transverse mode purity is improved, but the high-frequency properties deteriorate
Solution Approach 1:
The patent carefully selects and controls the dimensional parameters of the current confinement structure (diameter ≤4 μm) to simultaneously achieve single-peak transverse mode emission and maintain adequate high-frequency response characteristics
4Stability of the object's composition
If the current confinement structure size is reduced to achieve single-peak transverse mode emission, then the transverse mode purity is improved, but the output power decreases
Solution Approach 1:
The patent optimizes the current confinement structure dimensions (diameter ≤4 μm) to achieve a balance between transverse mode purity and output power, ensuring single-peak mode emission while maintaining sufficient laser output through careful parameter selection
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The complex refractive index distribution structure allows for stable single-peak transverse mode emission with improved current injection uniformity and reduced resistance, enabling high optical connection efficiency and compatibility with optical fibers for long-distance transmission.
Implementation Method 1
a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside
Implementation Method 2
creating a combined optical system that acts as a convex and concave lens to selectively oscillate in a single-peak transverse mode
Implementation Method 3
an upper reflector including a semiconductor multi-layer... upper diffractive bragg reflector (hereinafter 'upper DBR')
Implementation Method 4
the oxidized-Al current confinement layer functions as an insulation area 98B having high electrical resistance
Data Source
AI summary
A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided.