Surface Emitting Semiconductor Component With Segmented Active Regions
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Solution Overview
Problem
Current radiation-emitting semiconductor components face inefficiencies in radiation power generation and electrical resistance, leading to reduced conversion efficiency and increased threshold current for laser activity.
Innovation Solution
A surface-emitting semiconductor component with multiple active regions and a frequency-selective element, along with a tunnel junction and resonator mirrors, is designed to optimize radiation intensity distribution and electrical resistance, enhancing radiation power generation and conversion efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If multiple active regions are used to increase radiation power generation, then radiation power output is improved, but device complexity increases
Solution Approach 1:
The semiconductor body is divided into multiple active regions (first active region, second active region, third active region) spaced apart in the emission direction. Each active region independently generates radiation, allowing the total radiation power output to be increased by summing the contributions from multiple segments rather than relying on a single large active region.
Solution Approach 2:
Multiple active regions are combined within a single semiconductor body structure, with all regions working together to generate radiation in the same emission direction. The radiation from multiple regions is merged and coupled out through the same output surface, achieving increased power output while maintaining a unified device structure.
2Loss of energy
If multiple active regions are used to distribute electrical resistance, then conversion efficiency is improved, but device complexity increases
Solution Approach 1:
The electrical resistance of the semiconductor body is segmented into multiple portions, with each active region contributing to the overall current path. By spacing multiple active regions apart in the emission direction, the current is distributed across multiple regions, effectively reducing the electrical resistance per active region and improving the conversion efficiency of electrical power to radiation power.
3Power
If active regions are spaced apart to reduce absorbed radiation power, then coupled-out radiation power is improved, but device complexity increases
Solution Approach 1:
The semiconductor body structure is designed with locally optimized properties: active regions are positioned at specific locations spaced apart in the emission direction where radiation absorption is minimized. This local quality optimization ensures that radiation generated in one active region passes through the spaces between regions with reduced absorption, maximizing the coupled-out radiation power.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution increases radiation power output, reduces electrical resistance per active region, and lowers the threshold current for laser activity, resulting in improved conversion efficiency and simplified manufacturing.
Implementation Method 1
By means of the tunnel junction, it is possible to increase the conversion efficiency of charge carriers injected into the semiconductor body into radiation (photons) by means of the active regions electrically conductively connected via the tunnel junction. An electron that recombines with generation of radiation in one active region can tunnel through the tunnel junction
Implementation Method 2
By means of the frequency-selective element, it is possible to influence the intensity distribution of radiation in the semiconductor body. The intensity distribution is preferably influenced in such a way that the intensity which can be absorbed in an absorbent element that is not formed for the generation of radiation in the semiconductor body is reduced
Implementation Method 3
The semiconductor component has an internal resonator or is formed for operation with an external resonator. During operation of the semiconductor component with resonator, a radiation field, in particular a field of standing waves (standing wave field) builds up in the resonator, and can be at least partly amplified by stimulated emission in the active regions
Implementation Method 4
A radiation-emitting semiconductor component with an emission direction and comprises a semiconductor body comprising a plurality of active regions which are suitable for the generation of radiation
Data Source
AI summary
A surface emitting semiconductor component (1) with an emission direction which comprises a semiconductor body (2). The semiconductor body comprises a plurality of active regions (4a, 4b) which are suitable for the generation of radiation and are arranged in a manner spaced apart from one another, a frequency-selective element (6) being formed in the semiconductor body.