Wide band gap semiconductor device with surface insulating film
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Solution Overview
Problem
Semiconductor devices face challenges in achieving surface metal layer flatness without compromising breakdown characteristics, leading to unreliable wire bonding and potential device damage during assembly.
Innovation Solution
The semiconductor device features a thinner surface insulating film in the cell portion compared to the outer peripheral portion, allowing for improved surface metal layer flatness while maintaining breakdown characteristics through a voltage-resistant structure and specific trench designs that distribute electric fields effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the surface insulating film is made thinner in the cell portion to improve surface metal layer flatness, then wire bonding reliability is improved, but breakdown characteristics may deteriorate
Solution Approach 1:
The patent applies local quality by making the surface insulating film thickness non-uniform: thinner in the cell portion (50-200 nm) to improve surface flatness for wire bonding, and thicker in the outer peripheral portion (200-500 nm) to maintain breakdown characteristics. This spatial variation in film thickness allows each region to optimize its function without compromising the other.
2Reliability
If the surface insulating film is made thicker to maintain breakdown characteristics, then breakdown voltage is improved, but surface metal layer flatness deteriorates
Solution Approach 1:
The patent applies local quality by making the surface insulating film thickness non-uniform: thinner in the cell portion (50-200 nm) to improve surface flatness for wire bonding, and thicker in the outer peripheral portion (200-500 nm) to maintain breakdown characteristics. This spatial variation in film thickness allows each region to optimize its function without compromising the other.
Data Source
AI summary
A semiconductor device of the present invention includes a semiconductor layer of a first conductivity type having a cell portion and an outer peripheral portion disposed around the cell portion, and a surface insulating film disposed in a manner extending across the cell portion and the outer peripheral portion, and in the cell portion, formed to be thinner than a part in the outer peripheral portion.