Surface Kinetics Model Adjustment Using Polarized Light Metrology
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Solution Overview
Problem
The challenge in microelectronics fabrication is the difficulty in developing processes that enable the continuous shrinking of critical dimensions due to varying plasma process conditions, leading to increased development time and costs, and the need for predictive surface kinetics models that are not accurately adjusted without manual or destructive metrology techniques.
Innovation Solution
A system and method that utilize a metrology tool and controller to acquire measurements, generate and adjust a surface kinetics model based on initial parameters, determine responses to polarized light, and apply machine learning to optimize the model for simulating on-sample performance during plasma processing, allowing for non-destructive measurement and faster, accurate model generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If manual or destructive metrology techniques are used to adjust surface kinetics models, then model accuracy can be improved, but development time and costs increase
Solution Approach 1:
The patent replaces manual metrology techniques and destructive sampling with an optical measurement system that uses polarized light to non-destructively measure sample characteristics. This substitution enables automatic model adjustment without physical contact or sample damage, resolving the contradiction between accuracy and time loss.
Solution Approach 2:
The system enables the surface kinetics model to self-adjust by automatically comparing model predictions with optical measurements and iteratively optimizing parameters. This self-service capability eliminates the need for manual intervention and destructive testing, simultaneously improving accuracy while reducing development time.
2Manufacturing precision
If traditional optical critical dimension modeling is used, then model generation can be performed, but the process is lengthy and requires destructive sampling
Solution Approach 1:
The patent replaces complex traditional optical critical dimension modeling with a simplified approach that uses polarized light optical measurements combined with surface kinetics modeling. This substitution maintains manufacturing precision while dramatically reducing process complexity and eliminating destructive sampling requirements.
Solution Approach 2:
The system changes the measurement parameters from traditional destructive cross-sectional analysis to optical properties (polarized light reflection/ transmission). This parameter change enables non-destructive measurement while maintaining the ability to accurately determine critical dimensions and adjust model parameters.
3Reliability
If surface kinetics models are not accurately adjusted, then development costs are reduced, but predictive capability is lost
Solution Approach 1:
The patent implements a feedback loop where optical measurements of actual sample characteristics are continuously compared with model predictions, and model parameters are automatically adjusted based on this feedback. This ensures predictive capability is maintained while the automated feedback mechanism reduces the complexity of manual model adjustment.
Solution Approach 2:
The system introduces an intermediary optical measurement system that bridges the gap between physical samples and computational models. This intermediary enables accurate model adjustment through non-destructive optical characterization, reducing the complexity involved in direct model-sample interaction while maintaining predictive reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces development time and costs by enabling fast, automatic, and accurate generation of predictive surface kinetics models, allowing for accelerated research and development of plasma processes without the need for destructive sampling or lengthy optical critical dimension modeling.
Implementation Method 1
determine an expected response of the surface kinetics model output to excitation by polarized light
Data Source
AI summary
A system is disclosed, in accordance with one or more embodiments of the present disclosure. The system includes a metrology tool configured to acquire one or more measurements of a portion of a sample. The system includes a controller including one or more processors configured to execute program instructions causing the one or more processors to: generate a surface kinetics model output based on a surface kinetics model; determine an expected response of the surface kinetics model output to excitation by polarized light; compare the determined expected response to the one or more measurements; generate one or more metrics based on the comparison between the determined expected response and the one or more measurements of the sample; adjust one or more parameters of the surface kinetics model to generate an adjusted surface kinetics model; and apply the adjusted surface kinetics model to simulate on-sample performance during plasma processing.