Surface-Emitting Laser Reflector Doping for Lower Resistance

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Solution Overview

Problem

Conventional surface emitting lasers face challenges in reducing resistance while maintaining manufacturing efficiency.

Innovation Solution

A surface emitting laser design with a high-concentration impurity region in the multilayer film reflectors, specifically in the second multilayer film reflector, and a standing wave adjustment layer to optimize optical thickness ratios and impurity distribution, along with a method for manufacturing that includes diffusing impurities into the film reflectors.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a high-concentration impurity region is provided in the entire region of the upper multilayer film reflector in the thickness direction, then resistance is reduced, but manufacturing efficiency decreases

Engineering Contradiction:
ImproveresistanceVSAvoidmanufacturing efficiency
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent applies local quality by providing high-concentration impurity regions only in specific layers (surface layer farther from active layer and intermediate layer) rather than uniformly throughout the entire multilayer film reflector. This localized doping approach reduces resistance in critical current flow paths while minimizing the total impurity diffusion time and complexity, thereby maintaining manufacturing efficiency.

Inventive Principle:
Principle #3Local quality

2Reliability

If impurity diffusion is performed throughout the entire multilayer film reflector, then electrical conductivity is improved, but manufacturing time increases

Engineering Contradiction:
Improveelectrical conductivityVSAvoidmanufacturing time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent segments the impurity diffusion process into distinct stages: first forming a high-concentration impurity region in the surface layer farther from the active layer, then selectively forming high-concentration impurity regions in specific intermediate layers. This segmentation allows each diffusion step to be optimized independently, reducing total manufacturing time while achieving the required electrical conductivity in critical regions.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies preliminary action by first forming the high-concentration impurity region in the surface layer before forming intermediate layer impurity regions. This preliminary doping establishes a foundation for subsequent selective doping, allowing the manufacturing process to proceed more efficiently by preparing the structure in advance for targeted impurity introduction in specific intermediate layers.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design effectively reduces resistance while maintaining manufacturing efficiency, enhancing the performance of the surface emitting laser.

Implementation Method 1

a high-concentration impurity region having a higher impurity concentration than other regions is partially provided in a thickness direction

Methodology Applied
Scientific EffectImpurity diffusion: Diffusion

Implementation Method 2

reducing the resistance while suppressing a decrease in manufacturing efficiency

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS12500394B2Surface emitting laser, surface emitting laser array, electronic device, and method for manufacturing surface emitting laser
Publication Date: 2025.12.16 SONY SEMICON SOLUTIONS CORP
  • US12500394B2 patent drawing
  • US12500394B2 patent drawing
  • US12500394B2 patent drawing

AI summary

Provided is a surface emitting laser that includes a first multilayer film reflector, a second multilayer film reflector, and an active layer between the first multilayer film reflector and the second multilayer film reflector. In at least one of the first multilayer film reflector or the second multilayer film reflector, a high-concentration impurity region having a higher impurity concentration than other regions is partially provided in a thickness direction. According to the present technology, there is provided a surface emitting laser capable of reducing resistance while suppressing a decrease in manufacturing efficiency.