Surface-Emitting Laser Reflector Layout for Heat Dissipation
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Solution Overview
Problem
Surface emitting semiconductor lasers with a distributed Bragg reflector (DBR) layer on a GaN substrate face heat dissipation issues, affecting their performance and reliability.
Innovation Solution
A semiconductor device design featuring a semiconductor substrate with a main substrate, a base semiconductor part, a compound semiconductor part, a first light reflector, and a second light reflector disposed in a hole penetrating the main substrate, enhancing heat dissipation and reducing threading dislocations for improved light emission efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a DBR layer is provided on a GaN substrate to form a surface emitting semiconductor laser, then light emission function is achieved, but heat dissipation performance deteriorates
Solution Approach 1:
The patent divides the laser structure into separate components: a GaN substrate for mechanical support, a semiconductor layer for light emission, and a DBR layer for optical reflection. This segmentation allows each component to be optimized for its specific function, with heat dissipation pathways designed independently from the optical emission structure.
Solution Approach 2:
The patent transitions from a planar DBR-on-substrate structure to a three-dimensional configuration where the semiconductor layer is positioned above the substrate with the DBR layer formed on the semiconductor layer. This vertical stacking creates additional thermal conduction pathways through the substrate while maintaining optical functionality.
2Reliability
If a DBR layer is provided on a GaN substrate to form a surface emitting semiconductor laser, then light emission function is achieved, but threading dislocation density increases
Solution Approach 1:
The patent introduces a semiconductor layer as an intermediary between the GaN substrate and the DBR layer. This intermediate layer acts as a buffer that prevents threading dislocations from propagating from the substrate through to the DBR layer, thereby maintaining high crystalline quality in the optical emission region.
Solution Approach 2:
By separating the substrate function from the active layer function through the semiconductor layer, the patent creates distinct zones where dislocation management can be optimized independently. The semiconductor layer segment absorbs and isolates dislocation defects, protecting the DBR layer from their harmful effects.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design improves heat dissipation and reliability by allowing laser oscillation and efficient light emission, while reducing defects and enhancing the light emission efficiency of the compound semiconductor part.
Implementation Method 1
a second light reflector disposed in the hole, overlapping the first light reflector, and below the first light reflector
Data Source
AI summary
A semiconductor device includes a semiconductor substrate including a main substrate, a base semiconductor part located above the main substrate, and a hole penetrating the main substrate in a thickness direction, a compound semiconductor part located above the base semiconductor part, a first light reflector located above the compound semiconductor part, and a second light reflector disposed in the hole, overlapping the first light reflector, and below the first light reflector.