Surface MIM Capacitor Structure for Package Impedance Suppression
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Solution Overview
Problem
Conventional semiconductor chip packaging faces challenges with high-frequency power supply impedance, leading to inaccurate signals due to noise interference, and the integration of decoupling capacitors within through-silicon interposers increases manufacturing complexity and cost.
Innovation Solution
A capacitor structure is directly formed on the electronic component using a metal-insulator-metal (MIM) diode technique, with a first metal layer electrically connected to electrode pads and an insulating layer separating it from a second metal layer, allowing for closer proximity to the semiconductor chip while minimizing manufacturing complexity and cost.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If decoupling capacitors are integrated into the through-silicon interposer, then impedance suppression effect is improved, but manufacturing complexity and cost increase
Solution Approach 1:
The capacitor structure is formed on the surface of the electronic component rather than embedding it within the through-silicon interposer. This dimensional shift from internal integration to surface mounting reduces manufacturing complexity while maintaining the decoupling function.
Solution Approach 2:
The capacitor structure is extracted from the through-silicon interposer and relocated to the electronic component surface. This separation simplifies the interposer manufacturing process while preserving the impedance suppression effect through proximity to the chip.
2Reliability
If decoupling capacitors are placed closer to the semiconductor chip, then impedance suppression effect is improved, but manufacturing difficulty increases
Solution Approach 1:
The capacitor structure is formed on the electronic component before assembly with the interposer. This preliminary formation allows for simpler processing using standard semiconductor fabrication techniques rather than requiring complex post-assembly integration.
Solution Approach 2:
The capacitor structure utilizes the existing metal layers and insulating layers from the electronic component fabrication process, copying the proven manufacturing steps rather than introducing new complex processes for capacitor formation.
3Reliability
If conventional capacitor integration methods are used, then decoupling function is achieved, but production yield decreases
Solution Approach 1:
The metal layers and insulating layers formed during electronic component fabrication serve dual purposes: both as functional circuit elements and as capacitor structure components. This multi-functionality eliminates additional processing steps and improves production yield.
Solution Approach 2:
The capacitor structure formation is merged with the existing electronic component fabrication process. By combining these operations into a single integrated process flow, production yield is improved through reduced process steps and lower defect rates.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration optimizes impedance suppression by reducing the distance between the decoupling capacitor and the semiconductor chip, achieving improved noise reduction while simplifying the manufacturing process and lowering production costs.
Implementation Method 1
a capacitor structure formed on the electronic component and exposed from the active face, wherein the capacitor structure includes a first metal layer disposed on the electronic component and electrically connected with the plurality of electrode pads, an insulating layer disposed on the first metal layer, and a second metal layer disposed on the insulating layer and electrically coupled with the first metal layer
Data Source
AI summary
An electronic module is provided, in which a first metal layer, an insulating layer and a second metal layer are sequentially formed on side faces and a non-active face of an electronic component to serve as a capacitor structure, where the capacitor structure is exposed from an active face of the electronic component so that by directly forming the capacitor structure on the electronic component, a distance between the capacitor structure and the electronic component is minimized, such that the effect of suppressing impedance can be optimized.