Surface-Mountable Semiconductor Laser Without Bonding Wires

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Solution Overview

Problem

Conventional semiconductor lasers using bonding wires face limitations in achieving high repetition rates and steep pulse edges due to increased inductance and electrical resistance, making it difficult to realize pulse lengths of 1 ns or 2 ns with operating currents of 40 A or more.

Innovation Solution

A surface-mountable semiconductor laser design with contact surfaces located on the same side of the semiconductor layer sequence, allowing for direct electrical and mechanical connection without bonding wires, reducing inductance and enabling high current densities and repetition rates.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If bonding wires are used for electrical connection, then the semiconductor laser can be connected to external contacts, but inductance and electrical resistance increase, limiting high repetition rates and steep pulse edges

Engineering Contradiction:

Improvehigh repetition rate capabilityVSAvoidbonding wire inductance

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent extracts and eliminates the bonding wire component from the electrical connection path. By providing contact surfaces directly on the semiconductor layer sequence, the invention removes the intermediate bonding wire element that causes inductance and resistance, enabling direct electrical connection between the semiconductor laser and external contacts.

Inventive Principle:

Principle #2Taking out (Extraction)

Solution Approach 2:

The patent merges the electrical contact function directly into the semiconductor layer structure by forming contact surfaces on the same side. This integration eliminates the separate bonding wire connection, combining the semiconductor active region and electrical contact interface into a unified structure that reduces parasitic inductance and resistance.

Inventive Principle:

Principle #5Merging (Combining)

2Speed

If bonding wires are used, then electrical connection is achieved, but pulse rise edges become less steep due to inductance

Engineering Contradiction:

Improvepulse rise edge steepnessVSAvoidelectrical resistance

Core Design Contradiction:

SpeedVSDevice complexity

Solution Approach 1:

The invention extracts the bonding wire from the electrical connection path, eliminating its parasitic inductance and resistance. The direct contact surfaces on the semiconductor layer sequence remove the intermediate connection element that limits pulse rise edge steepness, enabling faster electrical response.

Inventive Principle:

Principle #2Taking out (Extraction)

3Device complexity

If contact surfaces are on opposite sides, then electrical connection is possible, but inductance increases

Engineering Contradiction:

Improveinductance reductionVSAvoidcontact surface configuration

Core Design Contradiction:

Device complexityVSEase of manufacture

Solution Approach 1:

The patent employs an asymmetric contact surface configuration where both contact surfaces are located on the same side of the semiconductor layer sequence rather than on opposite sides. This asymmetric arrangement optimizes the current path geometry to minimize inductance, deviating from the conventional symmetric opposite-side contact configuration.

Inventive Principle:

Principle #4Asymmetry

Solution Approach 2:

The invention changes the spatial dimension of contact surface arrangement by placing both contacts on the same lateral surface rather than distributing them on opposite sides. This dimensional reconfiguration of the contact geometry reduces the current loop area and associated inductance.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design achieves significantly reduced inductance, allowing for steeper pulse rise edges and reduced electrical resistance, enabling the realization of high repetition rates and short pulse lengths, and reduces costs by eliminating the need for bonding wires.

Implementation Method 1

the generation region contains one or more active layers in which the laser radiation is generated by means of charge carrier recombination

Methodology Applied

Scientific EffectCharge carrier recombination: Electroluminescence

Implementation Method 2

the contact surfaces are located directly on the p-side and/or on the n-side or are in ohmic contact with the p-side or the n-side

Methodology Applied

Scientific EffectOhmic contact: Ohm's Law

Data Source

PatentUS10833476B2Surface-mountable semiconductor laser, arrangement with such a semiconductor laser and operating method for same

Publication Date: 2020.11.10 OSRAM OLED

AI summary

A surface-mountable semiconductor laser and an arrangement with such a semiconductor laser are disclosed. In one embodiment, the semiconductor laser is includes a semiconductor layer sequence having at least one generation region between a p-side and an n-side, at least two contact surfaces for external electrical contacting of the p-side and the n-side, wherein the contact surfaces are located on the same side of the semiconductor layer sequence in a common plane so that the semiconductor laser are contactable without bonding wires, at least one of a plurality of conductor rails extending from a side with the contact surfaces across the semiconductor layer sequence and a plurality of through-connections running at least through the generation region, wherein the generation region is configured to be pulse operated with time-wise current densities of at least 30 A/mm2.