Selective Surface Passivation for High-Selectivity Vapor Deposition
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Solution Overview
Problem
Existing selective deposition processes lack sufficient selectivity for achieving desired patterning in semiconductor manufacturing, often requiring expensive multi-step lithographic techniques and surface treatments that themselves necessitate lithography.
Innovation Solution
A method involving selective formation of an inhibitor layer on one surface of a substrate relative to another, followed by selective deposition of a layer of interest, utilizing vapor phase reactants and plasma treatments to enhance selectivity, and optionally including cleaning and baking steps to control deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional subtractive patterning processes are used, then lithographic patterning can be achieved, but processing cost increases and device dimensions cannot be further shrunk
Solution Approach 1:
The patent replaces conventional mechanical/subtractive patterning processes with a chemical field-based approach using vapor phase reactants. The chemical reactions occur selectively on substrate surfaces to deposit patterns directly, eliminating the need for mechanical masking and etching steps, thereby reducing process complexity while maintaining patterning precision
Solution Approach 2:
The patent utilizes changes in chemical parameters (reactant concentration, temperature, pressure) to control the selectivity and precision of deposition. By adjusting these parameters, the process achieves high manufacturing precision for narrow structures without requiring complex multi-step lithographic procedures
2Manufacturing precision
If surface pretreatment is applied to enhance selectivity, then deposition selectivity improves, but additional lithography steps are required
Solution Approach 1:
The substrate surfaces self-differentiate their reactivity toward vapor phase reactants based on their inherent material properties. Conductive surfaces selectively attract certain reactants while non-conductive surfaces remain resistant, eliminating the need for external pretreatment steps and maintaining high deposition selectivity without reducing productivity
3Productivity
If additive patterning techniques are used, then lithography steps can be reduced, but selectivity for deposition processes is insufficient
Solution Approach 1:
The patent changes the chemical state and reactivity parameters of different substrate surfaces to achieve high deposition selectivity. By controlling the chemical environment and reactant properties, the process enables selective material deposition on specific surface types, achieving manufacturing precision comparable to conventional lithography while maintaining reduced process steps
Solution Approach 2:
Vapor phase reactants serve as intermediaries that mediate the selective deposition process. These reactants interact differently with conductive versus non-conductive surfaces, enabling precise pattern formation through chemical reactions rather than direct physical deposition, thereby achieving high selectivity without additional lithography steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables selective deposition with reduced lithography steps, allowing enhanced scaling in narrow structures and precise control over layer edges without the need for expensive patterning, thereby reducing processing costs and improving manufacturing efficiency.
Implementation Method 1
selectively forming an inhibitor layer from vapor phase reactants on the first surface relative to the second surface
Implementation Method 2
selectively depositing a layer of interest from vapor phase reactants on the second surface relative to the passivation layer
Implementation Method 3
cleaning the second surface to remove any inhibitor after selectively forming the inhibitor layer
Data Source
AI summary
Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.