Surface Plasmon Lithography Pattern Correction via Lookup Tables

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Surface plasmon-based lithography technology faces errors between obtained photoresist patterns and design patterns due to its complex principles and various influencing factors, limiting its promotion and application in integrated circuit manufacturing.

Innovation Solution

A method involving the formation of test patterns on a test mask, exposure of a photoresist layer, establishment of data tables correlating test and exposure parameters, and correction of design patterns to minimize errors, using a table look-up method for reliable and efficient pattern correction.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If surface plasmon-based lithography technology is used to achieve high resolution, then the lithography resolution can reach below the diffraction limit, but there are errors between the obtained photoresist pattern and the design pattern on the mask

Engineering Contradiction:
Improvelithography resolutionVSAvoidpattern accuracy
Core Design Contradiction:
Manufacturing precisionVSMeasurement precision

Solution Approach 1:

The patent applies preliminary action by pre-establishing a correction data table through systematic experiments before actual production. Multiple test patterns with different parameters are exposed and measured in advance to obtain correction data, which is then stored in a lookup table. During actual lithography, the corresponding correction data is directly retrieved and applied to the design patterns, eliminating the need for real-time complex calculations and ensuring both high resolution and pattern accuracy.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent employs parameter changes by systematically varying test parameters (such as line width, spacing, and pattern density) during the correction data acquisition phase. By exposing test patterns with different parameters and measuring the actual results, the patent establishes the relationship between design parameters and actual printed parameters. This enables dynamic parameter adjustment through the correction table to compensate for lithography errors while maintaining the high resolution capability of surface plasmon lithography.

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If a complex principle of plasma lithography with many influencing factors is used, then high resolution can be achieved, but the complexity of the process increases and requires extensive testing and data processing

Engineering Contradiction:
Improvelithography resolutionVSAvoidprocess complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent applies copying by creating a comprehensive correction data table that captures the complex relationships between various lithography parameters and outcomes. Instead of dealing with the complex physical processes directly during production, the patent copies the essential correction information into a lookup table format. This allows the complex correction logic to be pre-computed and stored, simplifying the actual production process to simple table lookups and applications while maintaining the benefits of the complex plasma lithography process.

Inventive Principle:
Principle #26Copying

3Measurement precision

If extensive testing and data processing are performed to correct pattern errors, then pattern accuracy improves, but time consumption and computational resources increase

Engineering Contradiction:
Improvepattern accuracyVSAvoidcorrection time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent resolves this contradiction by performing all extensive testing and data processing in advance during the correction table generation phase. The time-consuming activities of pattern exposure, measurement, and data analysis are completed beforehand to build a comprehensive correction lookup table. During actual production, only simple table lookups and data applications are needed, dramatically reducing the time required while maintaining high pattern accuracy. The heavy computational work is shifted from the production phase to the preparation phase.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method accurately reduces errors between lithography patterns and target patterns, ensuring reliability and efficiency in pattern correction, facilitating the advancement and application of surface plasmon lithography technology.

Implementation Method 1

a method for breaking through a diffraction limit represented by a surface plasmon-based lithography technology has been gradually applied in a manufacturing process of an integrated circuit. A surface plasmon-based lithography technology uses a variety of film structures without the use of a complex lens. Using the surface plasmon-based lithography technology, a lithographic image with a wavelength size much smaller than a wavelength size of the light source may be achieved with a large wavelength.

Methodology Applied
Scientific EffectSurface plasmon: Surface Acoustic Wave

Data Source

PatentUS20240077799A1Method for correcting lithography pattern of surface plasma
Publication Date: 2024.03.07 INST OF MICROELECTRONICS CHINESE ACAD OF SCI LTD
  • US20240077799A1 patent drawing
  • US20240077799A1 patent drawing

AI summary

Provided is a method for correcting a lithography pattern of a surface plasma, including: forming a plurality of test patterns on a test mask; exposing a photoresist layer by using the test mask containing the test patterns to form a plurality of photoresist patterns; establishing a first data table based on a correspondence between the first test parameter and the second test parameter of the test pattern and the first exposure parameter and the second exposure parameter of the photoresist pattern; processing the first data table according to the first exposure parameter to obtain a second data table; and respectively correcting second test parameters of a plurality of design patterns according to the second data table to obtain corrected design patterns, and manufacturing a mask for exposure by using the corrected design patterns.