Substrate Surface Silylation for Selective Silicon Nitride Etching
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Solution Overview
Problem
Existing lithography techniques are inefficient for highly integrated semiconductor devices and require a substrate processing method that can be used in the semiconductor manufacturing process.
Innovation Solution
A substrate processing method and a substrate manufacturing method that includes a substrate processing apparatus and a substrate processing apparatus.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If lithography treatment is used for fine patterning, then manufacturing precision can be achieved, but device complexity and cost increase
Solution Approach 1:
The patent employs self-assembled monolayers (SAMs) that automatically organize themselves on substrate surfaces through spontaneous adsorption. The monolayer forms selective protective patterns without requiring complex lithography equipment or multiple processing steps, enabling fine patterning through the inherent self-organizing properties of the molecular layer
Solution Approach 2:
The patent changes the chemical parameters of the substrate surface by introducing specific functional groups that selectively attract or repel monolayer-forming molecules. By controlling surface chemistry parameters such as hydrophilicity/hydrophobicity and chemical reactivity, the patent achieves selective monolayer formation that enables precise patterning without complex lithography processes
2Adaptability or versatility
If monolayer is selectively formed based on chemical properties, then adaptability increases, but manufacturing precision decreases
Solution Approach 1:
The patent applies different chemical functional groups to specific local regions of the substrate surface, creating zones with distinct chemical properties. This local differentiation enables selective monolayer formation in specific areas while maintaining precision, as the monolayer forms only where the chemical conditions are appropriate
Solution Approach 2:
The patent introduces surface treatment layers or functional group intermediaries that mediate between the substrate and the monolayer-forming molecules. These intermediaries provide controlled chemical interfaces that enhance both the adaptability to different substrate combinations and the precision of monolayer formation by creating well-defined binding sites
3Manufacturing precision
If silylation treatment is performed on both surfaces, then etching selectivity improves, but liquid draining properties worsen
Solution Approach 1:
The patent segments the substrate into distinct regions with different surface treatments: one surface receives silylation treatment to enhance etching selectivity, while the other surface maintains different properties for optimal liquid draining. This spatial segmentation allows each surface to be optimized for its specific function without compromising the other
Solution Approach 2:
The patent applies silylation treatment selectively to specific local areas rather than uniformly across the entire substrate. By controlling the spatial distribution and density of silyl groups, the patent achieves high etching selectivity in treated regions while maintaining liquid draining properties in untreated or differently treated regions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method provides favorable etching selectivity for silicon nitride-containing second surfaces with respect to silicon oxide-containing first surfaces and excellent liquid draining properties.
Implementation Method 1
a surface modification step of forming an etching selectivity imparting film on at least a part of the first surface and at least a part of the second surface by a silylation treatment of bringing a silylating agent into contact with the first surface and the second surface
Implementation Method 2
an etching step of selectively carrying out an etching treatment on the second surface with respect to the first surface using an etching agent
Data Source
AI summary
A substrate processing method according to the present invention incudes: a preparation step of preparing a substrate in which at least a first surface containing silicon oxide and a second surface containing silicon or a silicon compound other than silicon oxide are exposed; a surface modification step of forming an etching selectivity imparting film on at least a part of the first surface and at least a part of the second surface by a silylation treatment of bringing a silylating agent into contact with the first surface and the second surface; and an etching step of selectively carrying out an etching treatment on the second surface with respect to the first surface using an etching agent after the surface modification step.