Surface Support Peaks for Damage-Free Semiconductor Gripping

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Solution Overview

Problem

Semiconductor manufacturing faces challenges in producing surfaces with tightly controlled flatness and roughness for gripping and clamping, as existing methods often result in uncontrolled asperities and voids that can damage the supported parts.

Innovation Solution

A method involving a series of masks to shape custom structures on a flat surface by masking and removing material iteratively, using ion beam figuring masks and dry etching to form support peaks with controlled peak heights and distribution, achieving precise control over surface topography.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If existing methods are used to create surface structures for gripping and clamping, then the surface can provide mechanical grip, but uncontrolled asperities and voids are formed that can damage supported parts

Engineering Contradiction:

Improvedamage-free grippingVSAvoidsurface topography control

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The surface is segmented into discrete support peaks rather than continuous asperities. Each peak is individually controlled through photolithography patterning, allowing precise spatial distribution and isolation of load-bearing regions. This segmentation prevents uncontrolled damage propagation while maintaining effective gripping force distribution.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different regions of the surface are given different properties: support peaks provide mechanical grip while inter-peak regions maintain controlled flatness for damage-free contact. The photolithography process enables local modification of surface topology, creating zones with distinct functional characteristics within a single surface structure.

Inventive Principle:

Principle #3Local quality

2Manufacturing precision

If photolithography and material removal are used iteratively to form support peaks, then precise control of surface topography is achieved, but the manufacturing process becomes more complex

Engineering Contradiction:

Improvesurface topography controlVSAvoidmanufacturing process complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

Traditional mechanical machining or abrasive methods are replaced with photolithography-based material removal. This substitution enables precise topographical control through optical patterning and chemical etching, achieving nanometer-scale surface precision while using standard semiconductor manufacturing equipment and processes.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The manufacturing process uses iterative cycles of photolithography exposure, development, and material removal. Each cycle progressively refines the support peak structures, with multiple patterning and etching steps allowing precise control of peak geometry, height, and distribution through repeated application of the same process sequence.

Inventive Principle:

Principle #19Periodic action

3Measurement precision

If support peaks are formed with controlled heights and distribution, then gripping accuracy is enhanced, but more material removal and processing steps are required

Engineering Contradiction:

Improvegripping accuracyVSAvoidprocessing time

Core Design Contradiction:

Measurement precisionVSLoss of time

Solution Approach 1:

Support peak locations and geometries are predetermined through photolithography mask design before material removal begins. The patterning process pre-defines the exact positions, sizes, and distributions of support peaks, allowing material to be removed only where needed. This preliminary patterning prevents unnecessary material removal and streamlines the manufacturing sequence.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

Support peak characteristics such as height, radius, and spacing are controlled by adjusting photolithography parameters including exposure dose, development time, and etch conditions. These parameter changes enable optimization of gripping accuracy for different applications without requiring fundamental process changes, allowing rapid adaptation to different precision requirements.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the formation of surfaces with desired topography, ensuring precise control of structure shapes, distribution, and surface characteristics, enhancing the accuracy and reliability of gripping and clamping in semiconductor manufacturing.

Implementation Method 1

removing material is performed by an ion beam

Methodology Applied

Scientific EffectIon beam figuring: Ion Beam

Implementation Method 2

removing material comprises a dry etching process

Methodology Applied

Scientific EffectDry etching:

Data Source

PatentUS20230359118A1Systems and methods for forming structures on a surface

Publication Date: 2023.11.09 ASML HLDG NV

AI summary

Systems and methods for forming structures (e.g., a plurality of support peaks) on a surface are described. Forming structures on a surface includes masking one or more portions of the surface; removing material from one or more unmasked portions of the surface; and iteratively repeating the masking and removing to reshape the unmasked portions of the surface until the plurality of structures (e.g., support peaks) are formed such that regions of the surface between individual structures (support peaks) have a target characteristic such as a target topography, roughness, etc.