Surface Treatment Composition for CMP Organic Residue Removal
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Solution Overview
Problem
Existing cleaning methods fail to adequately remove organic residues on semiconductor substrates after chemical mechanical polishing, which can lead to semiconductor device failure.
Innovation Solution
A surface treatment composition comprising a polymer with a specific constituent unit, an anionic or nonionic surfactant, and water is used to effectively remove organic residues by altering the surface hydrophobicity and facilitating residue detachment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional cleaning methods are used after CMP, then the cleaning process is simple and fast, but organic residues remain on the surface causing semiconductor device failure
Solution Approach 1:
The cleaning composition uses a composite polymer structure containing both hydrophobic groups (for adsorbing organic residues) and hydrophilic groups (for water solubility and surface wetting). This composite molecular structure enables simultaneous achievement of effective organic residue removal and maintaining solution stability, thereby improving semiconductor device reliability without excessive complexity
Solution Approach 2:
The invention changes the chemical composition parameters of the cleaning liquid by incorporating specific polymers with controlled hydrophobic-hydrophilic balance. By adjusting the polymer structure and composition ratios, the cleaning effectiveness against organic residues is enhanced while keeping the overall system manageable
2Manufacturing precision
If conventional cleaning compositions are used, then the process is simple, but organic residues from polishing remain on silicon nitride and polysilicon surfaces
Solution Approach 1:
The cleaning composition employs composite polymers combining hydrophobic segments (for targeted organic residue adsorption) and hydrophilic segments (for water compatibility). This molecular-level composite structure achieves superior surface cleanliness by specifically targeting organic residues while maintaining a controlled composition formulation
3Manufacturing precision
If thorough cleaning is performed to remove all impurities, then surface purity is improved, but the cleaning process becomes more complex and time-consuming
Solution Approach 1:
The invention replaces complex mechanical cleaning processes with a chemically-active cleaning composition that actively attacks and removes organic residues through molecular interactions. The polymer-surfactant system provides chemical cleaning power that achieves thorough defect removal while maintaining reasonable processing time
Solution Approach 2:
By changing the chemical parameters of the cleaning liquid (adding specific polymers and surfactants), the cleaning effectiveness is dramatically improved without proportionally increasing process complexity or time, thereby maintaining productivity while achieving better surface purity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition significantly reduces organic residues on silicon nitride and polysilicon surfaces, enhancing semiconductor device reliability by minimizing defects.
Implementation Method 1
the organic residues present on the surface of the objects to be polished after polishing containing silicon nitride or polysilicon can be sufficiently removed by the use of a surface treatment composition containing: a polymer having a constituent unit represented by Formula (1)
Implementation Method 2
at least one of an anionic surfactant and a nonionic surfactant
Data Source
AI summary
There is provided a means capable of sufficiently removing organic residues present on the surface of an object to be polished after polishing containing silicon nitride or polysilicon. A surface treatment composition containing: a polymer having a constituent unit represented by Formula (1) in [Chem. 1] below; at least one of an anionic surfactant and a nonionic surfactant; and water, in which the surface treatment composition is used for treating the surface of an object to be polished after polishing,in which, in Formula (1) above, R1 is a hydrocarbon group having the number of carbon atoms of 1 to 5, and R2 is a hydrogen atom or a hydrocarbon group having the number of carbon atoms of 1 to 3.