Surface Treatment Composition for CMP Residue and Roughness
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Solution Overview
Problem
Existing chemical mechanical polishing (CMP) techniques leave residues and increase surface roughness on semiconductor substrates, affecting electrical characteristics and device reliability.
Innovation Solution
A surface treatment composition comprising a cyclic amine compound with a nitrogen-containing non-aromatic heterocyclic ring, a nonionic polymer, and ammonium monocarboxylate buffer, operating at a pH above 7.0, effectively removes residues and reduces surface roughness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Shape
If CMP technique is used to flatten semiconductor substrate surface, then surface flatness is improved, but residues and surface roughness increase
Solution Approach 1:
The invention changes the chemical parameters of the polishing composition by incorporating a cyclic amine compound with a nitrogen-containing non-aromatic heterocyclic ring, nonionic polymer, and ammonium monocarboxylate buffer to maintain pH above 7.0. These parameter changes enable the composition to remove residues and reduce surface roughness while maintaining surface flatness improvement
Solution Approach 2:
The invention uses a composite polishing composition containing multiple components: cyclic amine compound (component A), nonionic polymer (component B), and ammonium monocarboxylate buffer (component C). This composite material works synergistically to achieve both surface flattening and residue removal, resolving the contradiction between improving surface flatness and preventing residue accumulation
2Reliability
If cleaning step is introduced after CMP to remove impurities, then electrical characteristics and reliability are improved, but additional process time and complexity are required
Solution Approach 1:
The invention merges the polishing and cleaning functions into a single CMP process by formulating a polishing composition that simultaneously achieves surface flattening and residue removal. The cyclic amine compound, nonionic polymer, and ammonium monocarboxylate buffer work together to eliminate the need for a separate cleaning step, saving process time while maintaining device reliability
Solution Approach 2:
The polishing composition is designed with multi-functionality, serving both as a flattening agent and a cleaning agent. The specific combination of components enables the composition to perform multiple functions (surface planarization and residue removal) in one process, reducing overall process complexity and time
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition efficiently removes abrasive grain and organic residues while reducing surface roughness, promoting uniform etching and preventing residue re-adhesion, thereby enhancing semiconductor substrate quality.
Implementation Method 1
a cyclic amine compound having a nitrogen-containing non-aromatic heterocyclic ring
Implementation Method 2
surface treatment composition... having pH of more than 7.0... efficiently removes abrasive grain and organic residues
Implementation Method 3
a nonionic polymer... preventing residue re-adhesion
Implementation Method 4
ammonium monocarboxylate acting as a buffer... having pH of more than 7.0
Data Source
AI summary
Provided is a means for sufficiently removing residues remaining on the surface of a polished object and reducing the surface roughness of the polished object. The present invention relates to a surface treatment composition containing components (A) to (C), and having pH of more than 7.0:the component (A): a cyclic amine compound having a nitrogen-containing non-aromatic heterocyclic ring,the component (B): a nonionic polymer,the component (C): a buffer represented by a formula: A-COO−NH4+ wherein A is an alkyl group having from 1 to 10 carbon atoms, or a phenyl group.