Surface Treatment Composition for Semiconductor CMP Residue Removal

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Solution Overview

Problem

The existing surface treatment compositions struggle to effectively remove ceria residue and organic residues from semiconductor substrates after chemical mechanical polishing (CMP), leading to potential reliability issues in semiconductor devices.

Innovation Solution

A surface treatment composition comprising a (co)polymer with a monomer-derived structural unit having a carboxyl group or a salt group, combined with a residue removing accelerator, and a dispersing medium, where the pH is less than 7, enhances the removal of ceria and organic residues by improving dispersibility and penetration of the polymer and accelerator.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a cleaning solution containing water-soluble (co)polymer with sulfonic acid or carboxylic acid groups is used, then defects such as abrasive grains and metal impurities are reduced, but ceria residue cannot be sufficiently removed

Engineering Contradiction:
Improvedefect removal capabilityVSAvoidceria residue removal
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent changes the pH parameter of the cleaning solution by adding a basic substance to create an alkaline environment (pH 8-12), which enables effective removal of ceria residue while maintaining the ability to remove other defects. This parameter change transforms the cleaning solution from ineffective against ceria to highly effective against all types of residues.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent creates a composite cleaning solution system that combines water-soluble (co)polymer with basic substances (such as ammonia, hydroxides, or carbonates). This composite approach integrates the defect-removal capability of the polymer with the ceria-dissolving capability of the basic substances, achieving comprehensive residue removal.

Inventive Principle:
Principle #40Composite materials

2Reliability

If sulfuric acid and hydrogen peroxide water mixture is used to remove ceria residue, then particle residue is removed, but organic residue cannot be sufficiently removed and process complexity increases

Engineering Contradiction:
Improveceria residue removalVSAvoidprocess steps
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent develops a universal cleaning solution that can remove multiple types of residues (ceria, organic residue, abrasive grains, metal impurities) simultaneously through a single formulation. The solution combines water-soluble (co)polymer, basic substances, and organic solvents to achieve multi-functional cleaning capability, eliminating the need for separate treatment steps.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent merges multiple cleaning functions into a single cleaning solution by combining water-soluble (co)polymer, basic substances, and organic solvents. This consolidation integrates ceria removal, organic residue removal, and general defect removal into one unified process, reducing process complexity.

Inventive Principle:
Principle #5Merging (Combining)

3Ease of manufacture

If conventional cleaning solutions are used, then processing is simple, but organic residue on polished substrate cannot be sufficiently removed

Engineering Contradiction:
Improveprocess simplicityVSAvoidorganic residue removal
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent creates a composite cleaning solution containing water-soluble (co)polymer, basic substances, and organic solvents. This composite formulation maintains relative simplicity in application while significantly improving organic residue removal capability through the synergistic action of multiple components.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composition achieves a high removal efficiency of ceria and organic residues, ensuring a clean semiconductor substrate surface, thereby improving the reliability and performance of semiconductor devices.

Implementation Method 1

a (co)polymer having a monomer-derived structural unit having a carboxyl group or a salt group thereof

Methodology Applied
Scientific EffectChemical adsorption: Adsorption

Implementation Method 2

a dispersing medium, wherein pH is less than 7

Methodology Applied
Scientific EffectDispersion: Dispersion (of waves)

Data Source

PatentUS10858615B2Surface treatment composition, preparation method thereof, surface treatment method using the same
Publication Date: 2020.12.08 FUJIMI INCORPORATED
  • US10858615B2 patent drawing
  • US10858615B2 patent drawing
  • US10858615B2 patent drawing

AI summary

A surface treatment composition according to the present invention is used for treating a surface of a polished object to be polished which is obtained after polishing with a polishing composition including ceria, using the surface treatment composition including a (co)polymer having a monomer-derived structural unit having a carboxyl group or a salt group thereof, a residue removing accelerator composed of a specific compound having a hydroxyl group, and a dispersing medium, wherein pH is less than 7.