Semiconductor Surface Treatment Layer for Pattern Collapse Prevention
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Solution Overview
Problem
Pattern collapse during wet clean and drying processes in semiconductor manufacturing, particularly at sub-20 nm critical dimensions, is a significant issue due to high capillary forces, and conventional methods fail to adequately address the problem.
Innovation Solution
The use of sublimable compounds capable of forming specific crystal structures, such as 1,4-diazabicyclo[2,2,2]octane, cyclotene, 1H-pyrazole, and hexamethylcyclotrisiloxane, in surface treatment compositions that include solvents, which are applied to patterned semiconductor substrates, solidified, and then removed by sublimation to minimize pattern collapse.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional wet clean and drying methods are used, then cleaning effectiveness is achieved, but pattern collapse occurs due to high capillary forces
Solution Approach 1:
The invention uses sublimable compounds that transition from solid to gas phase directly, eliminating the liquid-to-vapor transition that creates capillary forces. The sublimable compound is applied as a solid coating, allowed to sublime directly to vapor, thereby removing the harmful capillary action associated with conventional liquid drying while maintaining effective surface treatment.
Solution Approach 2:
The invention replaces the mechanical drying process (which relies on liquid evaporation and creates capillary forces) with a sublimation process. By using compounds that sublime directly from solid to gas, the harmful mechanical capillary forces are eliminated while maintaining the cleaning and surface treatment functions.
2Ease of operation
If sublimable compounds forming cubic or tetragonal crystal structures are used, then ease of sublimation is achieved, but pattern collapse is not minimized effectively
Solution Approach 1:
The invention changes the crystal structure parameter from cubic or tetragonal systems to hexagonal, trigonal, monoclinic, or orthorhombic systems. This parameter change in crystal structure is critical because these non-cubic/non-tetragonal structures minimize pattern collapse while still allowing effective sublimation, thus resolving the contradiction between ease of sublimation and pattern collapse prevention.
3Reliability
If high surface tension liquids are used during rinse, then cleaning power is improved, but capillary forces increase leading to pattern collapse
Solution Approach 1:
The invention replaces liquid-based rinsing (which creates capillary forces through surface tension) with a sublimation-based process. By using sublimable compounds that transition directly from solid to gas, the harmful capillary forces associated with liquid surface tension are eliminated while maintaining effective surface treatment and cleaning functions.
Solution Approach 2:
The invention substitutes the liquid-phase rinsing process with a solid-to-gas phase transition process. The sublimable compound is applied as a solid and then sublimed directly to vapor, bypassing the liquid phase entirely. This eliminates capillary forces while maintaining cleaning effectiveness through the sublimation process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces pattern collapse by forming a surface treatment layer that minimizes damage during rinsing and drying, maintaining a hydrophobic surface and preventing subsequent rinsing and drying-induced defects.
Implementation Method 1
removing by sublimation the sublimable compound disposed on the surface
Implementation Method 2
the at least one sublimable compound is capable of forming a crystal having a crystal system that is not a cubic or tetragonal crystal system
Data Source
AI summary
This disclosure relates to methods and compositions for treating a semiconductor substrate having a pattern disposed on a surface of the substrate.