Surfactant Rinse Composition for Sub-50 Nm Pattern Collapse Prevention
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Solution Overview
Problem
Conventional photolithographic processes face challenges with pattern collapse, line edge roughness, watermark defects, photoresist swelling, and blob defects when dealing with patterned material layers having line-space structures with a line width of 50 nm or below, particularly in the semiconductor industry, due to capillary forces and solvent absorption.
Innovation Solution
A composition comprising a primary ionic surfactant with fluoroalkyl groups and a secondary non-ionic surfactant with polyalkyloxy and/or polyalkylenoxy groups is used for cleaning and rinsing, reducing surface tension and contact angle to minimize capillary forces and improve wettability, while maintaining colloidal stability and reducing particle adhesion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photolithographic processes are used for patterned material layers with line width of 50 nm or below, then manufacturing capability is achieved, but pattern collapse occurs due to capillary forces
Solution Approach 1:
The patent changes the chemical composition parameters of the rinse solution by incorporating specific surfactants (fluorosurfactants and/or polyether-modified silicones) to alter surface tension and contact angle properties, thereby preventing pattern collapse while maintaining manufacturing capability for sub-50 nm structures
Solution Approach 2:
The patent introduces surfactants as intermediary substances between the rinse solution and the patterned material layer. These surfactants mediate the interaction by reducing surface tension and contact angle, preventing direct harmful capillary forces from acting on the delicate sub-50 nm patterns
2Ease of manufacture
If conventional rinsing processes are used, then cleaning is achieved, but line edge roughness increases
Solution Approach 1:
The patent modifies the surface tension and contact angle parameters of the rinse solution through surfactant addition, enabling effective cleaning while preserving line edge quality by controlling the wetting behavior on the patterned surface
3Ease of manufacture
If conventional rinsing processes are used, then cleaning is achieved, but watermark defects occur
Solution Approach 1:
The patent changes the surface tension parameters of the rinse solution by adding surfactants, which prevents watermark defect formation by ensuring uniform wetting and preventing localized water accumulation that would cause watermarks during drying
4Ease of manufacture
If conventional rinsing processes are used, then cleaning is achieved, but photoresist swelling occurs
Solution Approach 1:
The patent introduces surfactants as intermediary substances that form a protective interface between the rinse solution and photoresist, preventing excessive solvent penetration and swelling while still allowing effective cleaning of the patterned surface
5Ease of manufacture
If conventional rinsing processes are used, then cleaning is achieved, but blob defects occur
Solution Approach 1:
The patent modifies the surface tension and wetting properties of the rinse solution through surfactant addition, preventing blob defect formation by ensuring uniform liquid distribution and preventing localized aggregation that would cause blobs during the rinsing and drying process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively prevents pattern collapse, reduces line edge roughness, minimizes watermark defects, and enhances particle removal, leading to improved defect reduction and stability in the semiconductor industry.
Implementation Method 1
A composition comprising a primary ionic surfactant with fluoroalkyl groups and a secondary non-ionic surfactant with polyalkyloxy and/or polyalkylenoxy groups is used for cleaning and rinsing, reducing surface tension and contact angle
Implementation Method 2
A composition comprising a primary ionic surfactant with fluoroalkyl groups and a secondary non-ionic surfactant with polyalkyloxy and/or polyalkylenoxy groups is used for cleaning and rinsing, reducing surface tension and contact angle to minimize capillary forces and improve wettability
Implementation Method 3
A composition comprising a primary ionic surfactant with fluoroalkyl groups and a secondary non-ionic surfactant with polyalkyloxy and/or polyalkylenoxy groups is used for cleaning and rinsing, reducing surface tension and contact angle to minimize capillary forces
Data Source
AI summary
Described is a composition comprising as primary surfactant an ionic compound comprising one or more fluoroalkyl groups and as secondary surfactant at least one non-ionic compound comprising one or more polyalkyloxy and/or polyalkylenoxy groups, for cleaning or rinsing a product, preferably a product used in the semiconductor industry, and a respective use of said composition. Further described is a method of making a cleaned or rinsed product, preferably a product used in the semiconductor industry, comprising a substrate and supported thereon a patterned material layer having line-space structures with a line width of 50 nm or below, comprising the step of cleaning or rinsing said product with the composition of the invention.