Surrounding Bump Metallization for Reliable Fine-Pitch Ball Connections
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor device packaging configurations face challenges in accommodating sophisticated features and applications, leading to potential issues with reliability, performance, and cost.
Innovation Solution
A semiconductor device with a surrounding bump metallization (SBM) structure is developed, featuring a patterned redistribution layer with interconnection traces that support the formation of SBM structures with vertical metal wall segments and central openings, allowing for robust ball connections with superior reliability and tighter ball pitch control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor device packaging configurations are used, then manufacturing simplicity is maintained, but reliability and performance are compromised when accommodating sophisticated features
Solution Approach 1:
The bump metallization is segmented into multiple vertical wall segments arranged circumferentially around a central opening, creating a structured socket that enhances ball connection reliability while maintaining manufacturability through modular construction
Solution Approach 2:
The invention transitions from planar metallization to three-dimensional vertical wall structures, creating depth and volume in the bump metallization to improve mechanical interlocking and electrical connection reliability
2Adaptability or versatility
If sophisticated features are accommodated in semiconductor devices, then functionality is enhanced, but reliability and performance may deteriorate
Solution Approach 1:
The surrounding bump metallization structure serves multiple functions simultaneously: providing electrical connection, mechanical support, stress distribution, and alignment guidance for ball connectors, thereby enhancing reliability while accommodating sophisticated device features
3Productivity
If ball pitch is reduced for higher density, then device integration is improved, but control precision becomes more difficult
Solution Approach 1:
The vertical wall segments are positioned at specific locations around the central opening to create localized reference surfaces that guide ball connector placement, enabling precise ball pitch control even at reduced pitches through localized geometric constraints
Data Source
Figure 1
Figure 2
Figure 3
AI summary
A method of manufacturing a semiconductor device is provided. The method includes forming a first non-conductive layer over a top side a semiconductor die and patterning the first non-conductive layer to form an opening exposing a top surface of a bond of the semiconductor die. A metal trace of a redistribution layer is formed over a portion of the first non-conductive layer and exposed top surface of the bond pad. A surrounding bump metallization (SBM) structure is formed on a portion of the metal trace. The SBM structure includes a plurality of vertical metal wall segments surrounding a central opening.