Susceptor Bias Circuit With Anti-Interference for Wider Process Windows
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Solution Overview
Problem
Existing semiconductor plasma devices face issues with a narrow process window and potential wafer damage due to unidirectional DC bias voltage, limiting their ability to meet diverse process requirements.
Innovation Solution
A base bias adjustment apparatus and method that incorporates both positive and negative bias adjustment units, with an anti-interference unit to prevent mutual interference, allowing simultaneous adjustment of bias voltage, expanding the process window.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If only negative bias voltage is applied to the base, then ion bombardment energy is increased, but wafer damage occurs and process window is limited
Solution Approach 1:
The bias voltage control is segmented into two independent units: a negative bias adjustment unit for increasing ion bombardment energy, and a positive bias adjustment unit for preventing wafer damage. This segmentation allows each unit to independently control specific aspects of the bias voltage, resolving the contradiction between achieving high ion energy and preventing damage.
Solution Approach 2:
The system changes the parameter of bias voltage from unidirectional (negative only) to bidirectional (both positive and negative). By enabling both positive and negative bias voltages to be applied independently to the base, the system expands the process window while maintaining the ability to achieve high ion bombardment energy when needed.
2Adaptability or versatility
If both positive and negative bias adjustment units operate simultaneously, then process flexibility is improved, but mutual interference between circuits occurs
Solution Approach 1:
An anti-interference unit is introduced as an intermediary component between the positive and negative bias adjustment circuits. This unit acts as a mediator that prevents mutual interference between the two circuits while allowing both to operate simultaneously, thus enabling process flexibility without circuit interference.
Solution Approach 2:
The interference between the positive and negative bias circuits is extracted and isolated through the anti-interference unit. This unit separates the two circuits electrically, taking out the interference problem and allowing both bias adjustment units to function independently without mutual disruption.
Data Source
Figure 1~2
Figure 3~4A
Figure 4B~5
AI summary
The present disclosure provides a base bias adjustment apparatus and method, and a semiconductor process device. The base bias adjustment apparatus includes: a positive bias adjustment unit; a negative bias adjustment unit; and an anti-interference unit. A first terminal of the positive bias adjustment unit is grounded, and a second terminal of the positive bias adjustment unit is electrically connected to a base for adjusting a bias voltage of the base to have a positive bias voltage at the base. A first terminal of the negative bias adjustment unit is grounded, and a second terminal of the negative bias adjustment unit is electrically connected to the base through the anti-interference unit for adjusting the bias voltage of the base to have a negative bias voltage at the base. The anti-interference unit is electrically connected between the negative bias adjustment unit and the base for suppressing a current from a circuit between the positive bias adjustment unit and the base from flowing into a circuit between the negative bias adjustment unit and the base, thereby facilitating simultaneous operation of the positive bias adjustment unit and the negative bias adjustment unit in a process. The technical solution of the present disclosure meets different process needs, thereby expanding a process window.