Susceptor Edge Temperature Control for Uniform Epitaxial Growth
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Solution Overview
Problem
Existing epitaxial wafer growth technologies face challenges in achieving uniform thickness and flatness of the epitaxial layer, particularly at the edge of the wafer, which affects photolithography, CMP, and SOI bonding processes, especially as wafer diameters increase.
Innovation Solution
A susceptor with a temperature control member is integrated into the epitaxial layer growth apparatus, featuring a variable width and alternating first and second points to control heat distribution, ensuring uniform epitaxial layer growth by adjusting heat retention based on crystal orientations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional heating methods are used in epitaxial layer growth apparatus, then the epitaxial layer can be grown on the wafer, but the thickness uniformity and flatness of the epitaxial layer deteriorate, especially at the edge of the wafer
Solution Approach 1:
The patent applies local quality by providing a temperature control member with different widths at different radial positions of the susceptor. The width of the temperature control member varies in the radial direction, allowing different regions of the susceptor to have different thermal characteristics. This enables precise local temperature control at the wafer edge region, ensuring uniform epitaxial layer thickness and flatness across the entire wafer surface.
Solution Approach 2:
The patent implements parameter changes by modifying the physical dimensions of the temperature control member, specifically its width in the radial direction. By changing the width parameter of the temperature control member, the heat distribution characteristics are altered, which directly affects the temperature uniformity across the wafer. This parameter adjustment enables control over the epitaxial layer growth conditions to achieve both thickness uniformity and flatness.
2Productivity
If wafer diameter is increased to 300 mm or more, then the productivity and capacity of the epitaxial layer growth apparatus is improved, but the flatness control at the wafer edge becomes increasingly difficult
Solution Approach 1:
The patent addresses the edge flatness control issue in large-diameter wafers by applying local quality through a temperature control member with radially varying width. This design provides enhanced temperature control specifically at the wafer edge region, which is critical for maintaining flatness in 300 mm or larger wafers. The localized temperature management compensates for the increased difficulty of edge control that comes with larger wafer sizes.
Solution Approach 2:
The patent introduces a dimensional variation in the temperature control member's width along the radial direction. By adding this dimensional variation (width changing in radial direction), the system gains an additional degree of freedom for controlling heat distribution. This dimensional change enables independent control of edge region temperature, allowing large-diameter wafers to maintain edge flatness despite their increased size.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the uniformity of epitaxial layer thickness and improves flatness, addressing issues in photolithography and bonding processes by controlling heat distribution and retention.
Implementation Method 1
a temperature control member disposed inside the side wall adjacent to the side wall at an edge of the bottom surface
Data Source
AI summary
Disclosed is a susceptor including a susceptor including a body including a bottom surface configured to support a wafer and a side wall configured to extend upward from a perimeter of the bottom surface, and a temperature control member disposed inside the side wall adjacent to the side wall at an edge of the bottom surface.