Susceptor Pocket and Rim Features for Film Edge Thickness Control
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Solution Overview
Problem
Existing semiconductor processing systems face issues with film thickness variation and bridging at the edge of substrates, leading to unreliable semiconductor devices and potential substrate damage during film deposition, particularly in power electronics applications.
Innovation Solution
A susceptor design with a circular pocket, annular ledge, and annular rim features, including tuned pockets, contact breaks, purge channels, and precursor vents, to control film edge thickness and prevent bridging by managing precursor flow and substrate support.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multi-pass deposition techniques are used to control bridging, then substrate damage risk is reduced, but system throughput decreases due to unload events
Solution Approach 1:
The susceptor design incorporates preliminary geometric features (tuned pockets, contact breaks, purge channels) that prevent bridging formation before it occurs, eliminating the need for multi-pass deposition and substrate unload events, thus maintaining high throughput while ensuring substrate safety
Solution Approach 2:
The susceptor structure performs self-service by using its own geometry (purge channels issuing purge gas, contact breaks limiting contact area) to automatically control precursor distribution and prevent bridging during continuous deposition, without requiring external intervention or process interruption
2Reliability
If film deposition is performed to achieve sufficient thickness, then device functionality is ensured, but edge thickness variation increases causing reliability issues
Solution Approach 1:
The susceptor features local geometric variations (tuned pockets at different radial positions, contact breaks at substrate edges) that create localized differences in precursor distribution and heat transfer, compensating for edge effects and achieving uniform film thickness across the substrate surface
Solution Approach 2:
The susceptor geometry parameters (pocket depth, contact break location, purge channel positioning) are optimized to control precursor gas flow distribution and substrate temperature profile, thereby controlling deposition rate uniformity and achieving consistent film thickness across the substrate
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The susceptor design ensures uniform film thickness and prevents bridging, enhancing device reliability and reducing substrate damage risks, while maintaining system throughput.
Implementation Method 1
purge channels, and precursor vents, to control film edge thickness and prevent bridging by managing precursor flow
Implementation Method 2
Films are commonly deposited onto substrates to fabricate semiconductor devices, such as using epitaxial techniques in chemical vapor deposition process tools
Data Source
AI summary
A susceptor has a circular pocket portion, an annular ledge portion, and an annular rim ledge portion. The circular pocket portion is arranged along a rotation axis and has a perforated surface. The annular ledge portion extends circumferentially about pocket portion and has ledge surface that slopes axially upward from the perforated surface. The rim portion extends circumferentially about the ledge portion and is connected to the pocket portion by the ledge portion of the susceptor. The susceptor has one or more of a tuned pocket, a contact break, a precursor vent, and a purge channel located radially outward of the perforated surface to control deposition of a film onto a substrate supported by the susceptor. Semiconductor processing systems, film deposition methods, and methods of making susceptors are also described.