Grounded Susceptor Electrode Layout for Parasitic Plasma Suppression
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Solution Overview
Problem
Conventional plasma apparatuses often generate parasitic plasma in undesired locations within the reaction chamber, leading to decreased film thickness uniformity and film residue deposition.
Innovation Solution
A susceptor assembly with a body, a heater element, a first electrode, and a second electrode, where the second electrode is electrically grounded to suppress parasitic plasma around the side and bottom surfaces, while the first electrode generates processing plasma above the substrate support surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a conventional plasma apparatus is used, then plasma processing can be performed, but parasitic plasma is generated in undesired locations
Solution Approach 1:
The plasma generation process is segmented into two distinct zones: a processing plasma zone above the substrate support surface for intended processing, and a suppressed plasma zone at side and bottom surfaces where parasitic plasma would form. The second electrode is strategically positioned to create this spatial segmentation, allowing controlled plasma generation only where needed.
Solution Approach 2:
Different regions of the plasma environment are given different qualities: the region above the substrate support surface is designed to support plasma generation for processing, while the regions at side and bottom surfaces are designed to suppress plasma formation. This local differentiation of plasma properties eliminates parasitic plasma without affecting the main processing zone.
2Object-affected harmful factors
If conventional plasma apparatus is used, then plasma processing can be performed, but film residue deposition occurs on reactor surfaces
Solution Approach 1:
The harmful effect of film residue deposition is extracted and eliminated by suppressing plasma formation at the side and bottom surfaces of the susceptor assembly. By preventing parasitic plasma generation in these regions, the source of film residue deposition is removed, while the main processing function above the substrate remains intact.
3Object-affected harmful factors
If a second electrode is added to suppress parasitic plasma, then parasitic plasma is reduced, but device complexity increases
Solution Approach 1:
The second electrode is merged with the susceptor assembly body, forming an integrated structure where the electrode and susceptor become a unified component. This integration minimizes additional complexity by combining multiple functions (substrate support, heating, and plasma suppression) into a single assembled unit rather than separate components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively suppresses parasitic plasma, improving film thickness uniformity and reducing film residue, thereby enhancing the overall efficiency and quality of substrate processing in plasma reactors.
Implementation Method 1
The second electrode is configured to be electrically grounded to suppress parasitic plasma around at least one of the side surface and the bottom surface
Implementation Method 2
the first electrode is configured to operably generate a processing plasma above the top surface
Implementation Method 3
The reactor system may include a capacitively coupled plasma configuration
Implementation Method 4
one or both of the substrate and the susceptor may be heated to a desired temperature set point
Data Source
AI summary
A susceptor assembly for a reactor system may provide various plasma control benefits. The susceptor assembly includes a body, a heater element, a first electrode, and a second electrode, according to various embodiments. The body may have a top surface, a side surface, and a bottom surface, wherein the top surface is a substrate support surface. The heater element may be embedded within the body. The first and second electrodes may also be embedded within the body of the susceptor assembly, with the first electrode disposed between the heater element and the top surface of the body. The second electrode may be generally disposed proximate at least one of the side surface and the bottom surface.