Semiconductor Susceptor Notch Bulge Epitaxy
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Solution Overview
Problem
Existing semiconductor wafer deposition technologies fail to account for the orientation notch on wafers with a <100> orientation, leading to uneven epitaxial layer growth due to varying crystal orientations, resulting in thickness fluctuations.
Innovation Solution
A susceptor design with a susceptor ring and base featuring distinct structures at specific positions around the circumference, including a notch position with inward bulges on the shelf and perimeter, to accommodate the orientation notch and ensure tailored growth conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a standard susceptor structure is used for depositing layers on semiconductor wafers, then the deposition process is simple and efficient, but thickness fluctuations occur in the edge region due to varying crystal orientations
Solution Approach 1:
The susceptor is designed with locally differentiated structures at four specific positions around its circumference. Each position has tailored geometric features (such as varied distances from the wafer edge or different surface profiles) that correspond to the four crystal orientations present in the <100> oriented wafer edge region. This local customization allows each susceptor position to optimize deposition conditions for its specific crystal orientation, thereby achieving uniform epitaxial layer thickness across all edge regions while maintaining overall deposition efficiency
Solution Approach 2:
The susceptor deliberately employs asymmetric structural variations at its four positions rather than a symmetric uniform design. The asymmetric features are specifically configured to match the asymmetric crystal orientation distribution in the wafer edge region, where four different crystal orientations exist at 90-degree intervals. This asymmetric design enables precise control over deposition conditions for each crystal orientation, resolving the thickness uniformity problem without sacrificing productivity
2Manufacturing precision
If the susceptor structure is modified to equalize epitaxial layer thickness, then manufacturing precision improves, but device complexity increases
Solution Approach 1:
Rather than redesigning the entire susceptor, the invention applies localized structural modifications only at four specific positions around the susceptor circumference. These local modifications are minimal in scope but precisely targeted to address the crystal orientation variations. The rest of the susceptor maintains its standard simple structure, thus achieving thickness uniformity improvement while minimizing the increase in overall device complexity
Solution Approach 2:
The susceptor is conceptually segmented into multiple positions, with four key positions identified for modification. Each position is independently optimized for its specific crystal orientation requirement. This segmentation approach allows for targeted modifications without requiring a complete redesign of the entire susceptor structure, thereby balancing manufacturing precision improvement with acceptable device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The susceptor design achieves even epitaxial layer growth by differentiating the structure at positions corresponding to fast and slow growth areas, effectively minimizing thickness fluctuations and 'notch-bump' issues.
Implementation Method 1
during the deposition of a layer (4) on a front side of the semiconductor wafer (2)... depositing the semiconductor wafer (2) in the edge region of a rear side of the semiconductor wafer (2)
Data Source
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AI summary
The invention relates to a susceptor for holding a semiconductor wafer having an orientation notch during the separating of a layer on a front side of the semiconductor wafer and to a method for separating the layer using the susceptor. The susceptor comprises a susceptor ring and a susceptor floor and the susceptor ring comprises a depositing surface for depositing the semiconductor wafer in the edge region of a rear side of the semiconductor wafer and a stepped outer boundary of the susceptor ring adjoining the depositing surface. The susceptor has four positions, at which the structure of the susceptor differs from the structure of the susceptor at an additional four positions, wherein the distance from one of the four positions to the next of the four positions equals 90° and the distance from one of the four positions to the next additional position equals 45°, and one of the four positions is a notch position, at which the structure of the susceptor differs from the structure of the susceptor on the three other of the four positions of the susceptor.