Susceptor Annular Protrusions for Wafer Valley Elimination
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Solution Overview
Problem
Existing susceptors in thermal process chambers often result in the formation of valleys on semiconductor substrates due to non-uniform heating, affecting the uniformity of material deposition.
Innovation Solution
A susceptor design featuring a rim, an inner region, and one or more annular protrusions on the inner region, which provides localized temperature control to minimize or eliminate valley formation by increasing the temperature of specific areas on the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional susceptor with a flat upper surface is used, then the substrate can be simply supported, but non-uniform heating occurs leading to valley formation on the substrate
Solution Approach 1:
The susceptor incorporates annular protrusions on its upper surface that create localized regions with different thermal properties. These protrusions are strategically positioned to provide enhanced heating in specific areas where valleys would otherwise form, making the temperature distribution non-uniform in a controlled manner to achieve overall uniform deposition
Solution Approach 2:
The susceptor surface is segmented into different regions: a flat support region for substrate contact and annular protrusion regions for localized heating. This segmentation allows the susceptor to perform multiple functions simultaneously - mechanical support and selective thermal enhancement - resolving the contradiction between simplicity and precision
2Temperature
If heating lamps are used below the susceptor, then the susceptor can be heated within strict tolerances, but valleys still form at certain locations on the substrate
Solution Approach 1:
The annular protrusions act as thermal intermediaries between the heating lamps and the substrate. They concentrate and redirect thermal energy to specific locations on the substrate that would otherwise receive insufficient heat, mediating the heat transfer to eliminate valleys while maintaining overall temperature control
Solution Approach 2:
The invention changes the geometric parameters of the susceptor surface by adding annular protrusions with specific dimensions and positions. This modifies the thermal radiation pattern and heat distribution characteristics, transforming the temperature profile across the substrate to achieve uniform deposition
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The susceptor design ensures improved uniformity of material deposition by maintaining precise temperature control and reducing valley formation on semiconductor substrates during thermal processing.
Implementation Method 1
heating lamps disposed below the susceptor... heated susceptor can then transfer heat to the substrate, primarily by radiation emitted by the susceptor
Implementation Method 2
transfer heat to the substrate, primarily by radiation emitted by the susceptor
Implementation Method 3
transfer heat to the substrate, primarily by radiation emitted by the susceptor
Data Source
AI summary
Embodiments of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one embodiment, the susceptor includes a first rim, an inner region coupled to and surrounded by the first rim, and one or more annular protrusions formed on the inner region. The one or more annular protrusions may be formed on the inner region at a location corresponding to the location where a valley is formed on the substrate, and the one or more annular protrusions help reduce or eliminate the formation of the valley.