Susceptor Purge Gas Channel Layout for Uniform Wafer-Edge Flow

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Solution Overview

Problem

Existing susceptors face issues with non-uniform purge gas flow and crack formation due to radial purge gas channels with varying lengths and branching points, leading to inefficiencies and structural weaknesses during press joining.

Innovation Solution

A susceptor design with a symmetrical purge gas channel structure, including an internal channel and radial branch channels, aligned with the shaft joint, to ensure uniform gas flow and prevent cracking, while minimizing heat transfer to the shaft.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Shape

If radial purge gas channels are used to ensure symmetry with respect to the center of the plate, then symmetry is improved, but uniform gas flow is worsened due to different channel lengths from the shaft-side channel

Engineering Contradiction:
ImprovesymmetryVSAvoiduniform gas flow
Core Design Contradiction:
ShapeVSManufacturing precision

Solution Approach 1:

The purge gas channel is segmented into multiple independent channels (first purge gas channel and second purge gas channel) that branch off at different positions from the shaft-side channel. This segmentation allows each channel to have optimized characteristics, with the first channel having a smaller cross-sectional area than the second channel, enabling uniform gas flow distribution despite radial symmetry requirements.

Inventive Principle:
Principle #1Segmentation

2Ease of operation

If multiple radial channels branch off at specific points where channels connect with the shaft, then gas distribution is improved, but crack formation is worsened due to high pressure during press joining

Engineering Contradiction:
Improvegas distributionVSAvoidcrack resistance
Core Design Contradiction:
Ease of operationVSStrength

Solution Approach 1:

The channel cross-sectional areas are locally optimized at different positions. The first purge gas channel has a smaller cross-sectional area than the second purge gas channel, creating local quality variations that reduce stress concentration at branching points. This local optimization prevents crack formation during press joining while maintaining effective gas distribution throughout the system.

Inventive Principle:
Principle #3Local quality

3Ease of manufacture

If the internal channel is aligned with the connecting portion of the shaft, then assembly is improved, but heat transfer from the plate to the shaft is increased

Engineering Contradiction:
ImproveassemblyVSAvoidheat transfer
Core Design Contradiction:
Ease of manufactureVSLoss of energy

Solution Approach 1:

The purge gas channels act as an intermediary barrier between the heating element layer and the shaft. By positioning the internal channel to conform to the connecting portion of the shaft and having purge gas flow through this intermediate path, thermal contact between the plate and shaft is reduced, minimizing heat transfer to the shaft while maintaining proper alignment for assembly.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design achieves uniform purge gas distribution around the wafer edge, reduces crack formation during assembly, and minimizes heat loss from the heating element to the shaft, enhancing process efficiency and structural integrity.

Implementation Method 1

a purge gas channel is needed to supply purge gas to an edge of a wafer to suppress localized non-uniform deposition of the thin film at the wafer's edge

Methodology Applied
Scientific EffectGas flow:

Implementation Method 2

a susceptor may be installed in a CVD apparatus and a PVD apparatus and include a heater plate having an embedded heating element to support and heat a substrate

Methodology Applied
Scientific EffectHeating: Heating

Implementation Method 3

the susceptor may be equipped with a radio-frequency (RF) electrode instead of or in addition to the heating element to be used for plasma formation in an etching process or the like for thin film layers on the substrate

Methodology Applied
Scientific EffectPlasma formation: Plasma

Data Source

PatentUS12406875B2Susceptor including purge gas flow passage
Publication Date: 2025.09.02 MICOCERAMICS LTD
  • US12406875B2 patent drawing
  • US12406875B2 patent drawing
  • US12406875B2 patent drawing

AI summary

Disclosed is a susceptor including a purge gas channel for supplying purge gas. The present disclosure provides a susceptor including: a plate having a heating element layer embedded therein; and a hollow shaft joined to a bottom of the plate, wherein the plate includes a purge gas channel layer disposed on a plane different from that of the heating element layer, and the purge gas channel layer includes an internal channel and multiple radial branch channels extending outward from the internal channel.