In-Situ Susceptor Sensors for Real-Time Film Thickness Metrology
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Solution Overview
Problem
Conventional methods for measuring film thickness during semiconductor manufacturing are ex-situ, which are not real-time and lack accuracy due to environmental changes, and they can lead to non-uniform heating and wafer non-uniformity.
Innovation Solution
An in-situ metrology system with sensors embedded within a susceptor and lift pin pads, capable of generating output signals corresponding to changes in frequency, allowing for real-time determination of film thickness and uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If ex-situ measurement methods are used, then measurement simplicity is maintained, but measurement precision deteriorates due to environmental changes and lack of real-time data
Solution Approach 1:
The patent introduces sensors as intermediary elements that are integrated within the reaction chamber to measure film thickness in-situ. These sensors act as mediators between the deposition process and the measurement system, enabling real-time monitoring without removing the wafer from the chamber. The sensors detect changes in film properties directly during deposition, providing accurate real-time data while maintaining measurement simplicity through automated signal processing.
2Manufacturing precision
If ex-situ measurement is performed, then equipment simplicity is maintained, but manufacturing precision deteriorates due to non-uniform heating and wafer non-uniformity
Solution Approach 1:
The patent segments the measurement function by placing multiple sensors at different locations within the reaction chamber, corresponding to different heating zones. This segmentation allows independent measurement of film thickness across various regions of the wafer, enabling detection of non-uniformity. The susceptor is divided into multiple heating zones with sensors positioned to monitor each zone, providing spatial resolution of film uniformity without requiring complex external measurement equipment.
3Productivity
If real-time in-situ measurement is implemented, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The patent merges the measurement function with the existing reaction chamber structure by integrating sensors directly into the susceptor and reaction chamber components. This consolidation eliminates the need for separate external measurement equipment and wafer handling mechanisms. The sensors are combined with the heating elements and susceptor structure, creating a unified system that performs both processing and measurement functions simultaneously, thereby improving throughput without proportionally increasing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables accurate, real-time measurement of film thickness and uniformity, improving process control and reducing non-uniformity issues, while maintaining high throughput.
Implementation Method 1
the sensor comprises a quartz crystal microbalance
Data Source
AI summary
Various embodiments of the present technology may provide in-situ metrology. A system may include a first sensor embedded within a susceptor and flush with a top surface of the susceptor. The system may also include lift pin pads having a second sensor arranged to contact a lift pin. The system may also include a third sensor arranged outside of a reaction chamber and adjacent to a view port. The system may also include a processor to receive output signals from one or more of the sensors and use the output signals to determine a film thickness on a wafer.