Susceptor Support Shaft Surface Zoning for Epitaxial Layer Uniformity

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Solution Overview

Problem

Conventional epitaxial growth equipment faces challenges in achieving uniformity of epitaxial layers due to temperature gradients on semiconductor substrates, leading to variations in thickness and electrical resistivity.

Innovation Solution

A shaft supporting a susceptor within an epitaxial growth apparatus is designed with a post having a reduced infrared radiation transmissivity surface, such as a matte or roughened surface, to control temperature distribution by selectively shielding infrared radiation, thereby improving temperature uniformity across the substrate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If a conventional shaft with high IR transmissivity is used, then heating efficiency is improved, but temperature uniformity deteriorates

Engineering Contradiction:
Improveheating efficiencyVSAvoidtemperature uniformity
Core Design Contradiction:
Use of energy by moving objectVSTemperature

Solution Approach 1:

The shaft is designed with non-uniform surface properties: the upper portion has a matte/roughened surface with low IR transmissivity to reduce overheating, while the lower portion maintains a smooth/polished surface with high IR transmissivity to ensure adequate heating. This local differentiation of surface quality resolves the contradiction between heating efficiency and temperature uniformity.

Inventive Principle:
Principle #3Local quality

2Temperature

If the shaft surface is made matte or roughened to reduce IR transmissivity, then temperature gradients are reduced, but manufacturing complexity increases

Engineering Contradiction:
Improvetemperature gradientsVSAvoidsurface treatment complexity
Core Design Contradiction:
TemperatureVSEase of manufacture

Solution Approach 1:

The shaft surface is segmented into distinct zones with different surface treatments. The upper portion receives matte or roughened treatment while the lower portion remains smooth. This segmentation allows targeted IR radiation control without requiring complex treatment of the entire shaft, balancing temperature gradient reduction with manufacturing feasibility.

Inventive Principle:
Principle #1Segmentation

3Productivity

If uniform heating is applied across the substrate, then productivity is improved, but temperature uniformity deteriorates

Engineering Contradiction:
Improveheating rateVSAvoidtemperature distribution uniformity
Core Design Contradiction:
ProductivityVSTemperature

Solution Approach 1:

The shaft with differentiated surface properties acts as an intermediary between the heat source and the substrate. By having different IR transmissivity zones, it mediates the heat distribution to achieve both adequate heating rate and improved temperature uniformity, preventing localized overheating while maintaining overall heating efficiency.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces temperature gradients, enhancing the uniformity of epitaxial layers by fine-tuning the heat distribution to targeted regions, addressing the issue of non-uniformity in existing epitaxial growth processes.

Implementation Method 1

The post includes an IR transmission reducing portion disposed proximately to the susceptor and having a lower transmissivity of infrared radiation than that of the support column

Methodology Applied
Scientific EffectInfrared radiation absorption: Absorption (EM radiation)

Data Source

PatentUS20240363378A1Components and apparatus for improving uniformity of an epitaxial layer
Publication Date: 2024.10.31 APPLIED MATERIALS INC
  • US20240363378A1 patent drawing
  • US20240363378A1 patent drawing
  • US20240363378A1 patent drawing

AI summary

Disclosed herein are a shaft for supporting a susceptor within an epitaxial growth apparatus, and an epitaxial growth apparatus having the same. In one example, the shaft for supporting a susceptor within an epitaxial growth apparatus includes a support column, a post, and a plurality of arms. The post is coupled with a support column. The post includes an infrared transmission reducing portion disposed proximately to the susceptor and having a lower transmissivity of infrared radiation than the support column. The plurality of arms extend radially from the support column and are configured to support the susceptor.