Independent Swing Nozzles for Uniform Substrate Film Deposition
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Solution Overview
Problem
Current substrate processing apparatuses face challenges in achieving uniform film thickness across the substrate surface due to limitations in gas distribution and processing efficiency, particularly with increased integration and performance demands in semiconductor devices.
Innovation Solution
A substrate processing apparatus with independently swinging first and second nozzle mechanisms, each discharging specific processing gases, allows for precise control over gas distribution and uniform processing across the substrate surface, reducing gas supply amounts and costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single gas supply rotates around the substrate to deliver processing gas, then the apparatus structure is simplified, but the film thickness uniformity deteriorates due to inadequate gas distribution control
Solution Approach 1:
The single rotating gas supply is segmented into multiple independent nozzle mechanisms (first and second nozzle mechanisms) that can swing independently. Each nozzle mechanism targets specific regions of the substrate, enabling precise control over gas distribution patterns and achieving uniform film thickness across the entire substrate surface.
Solution Approach 2:
The nozzle mechanisms are designed to swing dynamically during substrate rotation, allowing the gas delivery points to move across different regions of the substrate. This dynamic positioning enables comprehensive coverage and uniform gas distribution, resolving the film thickness uniformity issue while maintaining operational simplicity.
2Productivity
If multiple processing gases are supplied simultaneously across the entire substrate, then processing speed is improved, but gas consumption increases
Solution Approach 1:
Instead of supplying processing gas uniformly across the entire substrate, the patent applies different processing gases to specific local regions through independently controlled nozzle mechanisms. Each nozzle mechanism delivers gas only to its targeted area, reducing overall gas consumption while maintaining effective processing speed through localized treatment.
Solution Approach 2:
The patent uses multiple nozzle mechanisms that cover different portions of the substrate during their swing motion. By strategically positioning and swinging the nozzles, the system achieves complete substrate coverage through partial overlapping actions, ensuring thorough processing without excessive gas usage in any single region.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus achieves uniform substrate processing and reduces gas consumption by pinpointing gas delivery, enhancing film deposition accuracy and reducing operational costs.
Implementation Method 1
a substrate holder configured to hold the substrate in the internal space and rotate the substrate
Implementation Method 2
configured to form a desired film on a surface of a substrate, by supplying a plurality of kinds of processing gases from above
Data Source
AI summary
A substrate processing apparatus for performing a substrate processing on a substrate, includes a processing chamber having an internal space to accommodate the substrate, a substrate holder that holds the substrate in the internal space and rotates the substrate, a first nozzle mechanism swingable in the internal space and discharging a first processing gas to the substrate held by the substrate holder when the first nozzle mechanism swings, a second nozzle mechanism swingable in the internal space, separately from the first nozzle mechanism, and discharging a second processing gas to the substrate held by the substrate holder when the second nozzle mechanism swings, and a controller that controls the substrate holder and the first and second nozzle mechanisms. The controller, during the substrate processing, causes the first and second nozzle mechanisms to swing independently of each other in a state where the substrate is rotated by the substrate holder.