SWIR Detector Photonic Crystal Defects for Light Localization
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current infrared detectors face challenges in enhancing light localization and infrared signal enhancement due to the time reversal symmetry of traditional photonic crystals, which hinders their miniaturization and integration towards smaller size, lower power consumption, and higher performance.
Innovation Solution
A short-wave infrared detector unit device is developed with a photonic crystal structure layer featuring multi-coupled topological defects, comprising a third dielectric material layer with through-holes of different refractive indices, arranged in specific periodic patterns to modulate and localize the incident light field, thereby enhancing the infrared signal of the focal plane pixel.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional photonic crystals are used, then the structure is simple and easy to manufacture, but the light localization ability is insufficient due to time reversal symmetry
Solution Approach 1:
The patent introduces topological defects into the photonic crystal structure, breaking the time reversal symmetry of traditional photonic crystals. The asymmetric arrangement of defects with different refractive indices creates non-reciprocal light propagation, enabling effective light localization that overcomes the limitation of traditional symmetric photonic crystal structures.
Solution Approach 2:
The patent implements local quality by creating regions with different refractive indices through topological defects at specific locations within the photonic crystal. These localized defect regions with distinct optical properties (n1 and n2) enable targeted light field manipulation and enhancement of infrared signals at specific focal plane pixels without modifying the entire structure.
2Length of moving object
If the absorption layer is made thin to reduce device size, then the device size is reduced, but the quantum efficiency decreases due to short light propagation distance
Solution Approach 1:
The patent utilizes optical resonance and light field oscillation within the photonic crystal structure containing topological defects. The resonant coupling of light with the defect modes creates enhanced light-matter interaction, effectively increasing the light propagation path length within the thin absorption layer and improving quantum efficiency without increasing device size.
Solution Approach 2:
The patent introduces additional optical path length in the optical dimension through the photonic crystal's resonant cavities and defect modes. By creating multiple internal reflections and resonant pathways within the thin film structure, the effective light propagation distance is extended beyond the physical thickness of the absorption layer, maintaining high quantum efficiency in a compact device.
3Area of moving object
If the photosensitive area is reduced to miniaturize the detector, then the device size is reduced, but the light collection efficiency decreases
Solution Approach 1:
The patent employs resonant light field oscillation and cavity enhancement within the photonic crystal structure to concentrate and enhance the light field at the photosensitive region. The resonant modes trap and circulate light within the enhanced interaction region, effectively increasing the light collection capability despite the reduced photosensitive area, thereby improving the signal-to-noise ratio in miniaturized detectors.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device effectively localizes the incident light field, leading to improved infrared signal enhancement and reduced size, weight, and power consumption, aligning with the SWaP3 index requirements.
Implementation Method 1
a photonic crystal structure layer with multi-coupled topological defects arranged on a surface of the absorption layer 9. The photonic crystal structure layer with multi-coupled topological defects is a third dielectric material layer 3 with a through-hole structure
Implementation Method 2
The local mode excited by the interaction of the artificial micro-nano structures and photons can localize the incident light at a sub-wavelength scale
Implementation Method 3
the third dielectric material layer 3 has a refractive index of n3. Each of the first through holes 1 is filled with a first dielectric material, and the first dielectric material has a refractive index of n1. Each of the second through holes 2 is filled with a second dielectric material, and the second dielectric material has a refractive index of n2
Data Source
AI summary
A short-wave infrared detector unit device and a preparation method therefor are provided, which belongs to the technical field of infrared detectors. A photonic crystal structure layer with multi-coupled topological defects is arranged on a surface of an absorption layer. The photonic crystal structure layer with multi-coupled topological defects is a third dielectric material layer with a through-hole structure. The third dielectric material layer is provided with first through holes in periodic arrangement and second through holes in periodic arrangement. The first through holes are filled with a first dielectric material, and the second through holes are filled with a second dielectric material.