Power Semiconductor Switch Aging Detection with Temperature Validation
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Solution Overview
Problem
Existing methods for determining the aging state of power semiconductor switches lack accuracy and do not adequately account for the influence of temperature variations, leading to potential failures due to imprecise aging assessments.
Innovation Solution
A device and method utilizing multiple temperature-sensing devices and an evaluation unit to detect and validate temperature readings, coupled with characteristic curves, to accurately determine the aging state of power semiconductor switches by considering temperature variations and contact resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If temperature measurements are used to determine aging state, then aging assessment can be performed, but measurement accuracy deteriorates due to temperature variations and measurement distortions
Solution Approach 1:
The patent implements a feedback mechanism where multiple temperature sensors continuously monitor the power semiconductor switch, and the evaluation unit compares their readings against each other and against expected thermal models. When discrepancies are detected, the system adjusts or validates measurements in real-time, ensuring reliable temperature data for accurate aging assessment despite individual sensor variations or distortions.
Solution Approach 2:
The patent combines multiple temperature sensors and their measurements into a unified evaluation process. By merging data from several sensors positioned at different locations on the power semiconductor switch, the system creates a more robust and accurate temperature profile than any single sensor could provide, thereby improving both measurement precision and reliability.
2Measurement precision
If single temperature sensor is used, then device complexity is reduced, but measurement precision deteriorates due to inability to validate temperature readings
Solution Approach 1:
The system uses the multiple temperature sensors to mutually validate each other's readings. Each sensor's measurement is cross-checked against the others and against thermal models, allowing the system to self-validate temperature data without requiring external verification. This self-service approach improves measurement precision while keeping the evaluation logic integrated within the existing control unit.
Solution Approach 2:
The patent changes the parameter of temperature measurement from a single value to a distributed set of values across multiple sensors. This parameter change enables spatial validation of temperature readings and improves accuracy by capturing temperature gradients and variations across the power semiconductor switch, while the evaluation unit processes these additional parameters efficiently.
3Measurement precision
If temperature validation mechanism is implemented, then aging determination accuracy is improved, but device complexity increases due to additional temperature sensing devices
Solution Approach 1:
The evaluation unit is designed to perform multiple functions: it processes voltage and current measurements for contact resistance calculation, evaluates temperature readings from multiple sensors for validation, and determines the aging state. By making the evaluation unit universal and multi-functional, the patent avoids adding separate dedicated validation hardware, thereby improving aging determination accuracy without proportionally increasing device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances the accuracy of aging state determination by validating temperature measurements, allowing timely replacement of aged switches and reducing the risk of failure.
Implementation Method 1
a first device (5) for detecting or determining a temperature value T of the power semiconductor switch (2)... a second device (11) for detecting or determining another temperature value T of the power semiconductor switch (2)
Implementation Method 2
The evaluation unit (4) is configured to detect a voltage value across the power semiconductor switch (2) at a predetermined current value through the power semiconductor switch (2) in a closed state and to determine a contact resistance from this
Data Source
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AI summary
The invention relates to a device (1) for determining the aging state of at least one power semiconductor switch (2), wherein the device (1) comprises at least one evaluation unit (4) and a device (5) for detecting or determining a temperature (T) of the power semiconductor switch (2), wherein the evaluation unit (4) is configured to access characteristic curves of a contact resistance (Ron) over the aging state, wherein the characteristic curves are parameterized with different temperatures (T) of the power semiconductor switch (2), wherein the evaluation unit (4) is further configured to detect a voltage value (U) across the power semiconductor switch (2) at a predetermined current value (I) through the power semiconductor switch (2) in a switched-on state and to calculate a contact resistance (Ron) from this.wherein the evaluation unit (4) then assigns an aging state to the power semiconductor switch (2) by means of a characteristic curve, taking into account the temperature (T) of the power semiconductor switch (2) detected or determined by the device (5), wherein the device (1) has at least one further device (11) for detecting or determining the temperature (T) of the power semiconductor (2), wherein the evaluation unit (4) is configured to validate and/or adjust the temperature values of the power semiconductor switch (2) detected or determined by the device (5) by means of the temperature values of the power semiconductor switch (2) detected or determined by the at least one further device (11), and an associated method.