Semiconductor Switch Gate Control for Slew Rate and Overshoot
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Solution Overview
Problem
High-speed switching devices in applications like electric and hybrid electric vehicles face challenges in balancing switching speeds to achieve high efficiency while minimizing negative effects such as voltage overshoots, as existing technologies struggle to precisely control switching speeds without complex hardware changes.
Innovation Solution
A switching control system that includes a semiconductor switch with a variable resistor and capacitor, controlled by a controller to alter gate resistance and capacitance, allowing for precise control of switching speeds based on received voltage, motor torque, and DC bus voltage, thereby optimizing performance and efficiency while reducing overshoots.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If switching speeds are increased to improve efficiency, then efficiency is improved, but voltage overshoots and other negative effects occur
Solution Approach 1:
The gate resistance is made dynamically adjustable rather than fixed, allowing the system to optimize switching speed while controlling voltage overshoot. The variable gate resistance circuit changes resistance values based on operating conditions, enabling fast switching when needed and slower switching when voltage control is prioritized.
Solution Approach 2:
The invention changes the electrical parameters (resistance and capacitance) of the gate circuit to control switching behavior. By adjusting gate resistance and capacitance values, the system can precisely control the rate of voltage change (dv/dt) and current change (di/dt) during switching events, balancing efficiency and voltage overshoot.
2Device complexity
If fixed gate resistance and capacitance are used to simplify the circuit, then device complexity is reduced, but precise control of switching speeds cannot be achieved
Solution Approach 1:
The gate resistance and capacitance are made variable rather than fixed, allowing precise control of switching speeds. The variable gate resistance circuit uses controlled switches to dynamically adjust resistance values, while variable capacitance is achieved through switched capacitor networks, enabling precise dv/dt and di/dt control without excessive complexity.
Solution Approach 2:
The invention systematically varies electrical parameters (resistance and capacitance) to achieve precise switching control. By changing gate resistance and capacitance values based on operating conditions, the system can precisely control switching speed while maintaining reasonable circuit complexity through structured design.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables precise control of switching speeds, maximizing efficiency and minimizing voltage overshoots without requiring significant hardware changes, effectively addressing the challenges of high-speed switching in vehicle conversion devices.
Implementation Method 1
the variable resistor is a magnetoresistive gate resistor, the controller configured to control the magnetoresistive gate resistor by controlling current through at least one of the circuit and the switching control system to change a magnetic field around the magnetoresistive gate resistor
Data Source
AI summary
A system includes an electronic device including a circuit having a semiconductor switch, and a switching control system operably connected to the semiconductor switch. The switching control system is configured to control a switching speed of the semiconductor switch based on a received voltage by altering at least one of a gate resistance and a gate capacitance of the semiconductor switch.