Power Semiconductor Switch Gate-Voltage Temperature Sensing
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Solution Overview
Problem
Existing power semiconductor switching element temperature monitoring methods are prone to uncertainty and delayed reaction due to thermal inertia of carrier plates or heat sinks, leading to potential dynamic overheating and thermal failure.
Innovation Solution
A circuit arrangement that directly measures the temperature of the semiconductor switch by generating a control signal to alternate its states, using a current source to inject current into the gate terminal, and an evaluation unit to determine the absolute temperature from measured voltage and current, independent of thermal capacity and heat spreading.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If temperature sensors are arranged on a carrier plate or heat sink, then the temperature monitoring covers a larger area, but the measurement precision and reaction speed deteriorate due to thermal inertia
Solution Approach 1:
The invention extracts the temperature measurement function from the carrier plate or heat sink environment and relocates it directly to the semiconductor switching element. By measuring the voltage between gate and source/drain terminals while the element is in the on-state, the system obtains temperature data directly from the switching element itself, eliminating the thermal inertia problem of external sensors while maintaining wide-area monitoring capability through direct integration with each switching element.
2Device complexity
If temperature sensors are arranged on a carrier plate or heat sink, then the system structure is simplified, but the reaction rate deteriorates due to thermal capacity and thermal behavior uncertainty
Solution Approach 1:
The invention merges the temperature measurement function with the existing control circuitry of the semiconductor switching element. The evaluation unit utilizes the same gate terminal and control signals already present in the system, combining multiple functions (switching control and temperature measurement) into a single integrated approach. This eliminates the need for separate external temperature sensors and their associated thermal mass, thereby simplifying the system structure while achieving immediate temperature detection and fast reaction rates.
3Ease of manufacture
If external temperature sensors are used on carrier plate or heat sink, then the measurement system is easier to implement, but thermal failure risk increases due to delayed temperature detection
Solution Approach 1:
The semiconductor switching element performs its own temperature measurement through the voltage sensing method described in the invention. By utilizing the element's own terminal voltages during its on-state, the system enables each switching element to self-monitor its temperature condition. This self-service approach eliminates the need for external sensing infrastructure, maintaining ease of implementation while dramatically improving reliability through immediate temperature detection that prevents thermal failure before it occurs.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise and immediate temperature determination of the semiconductor switch, allowing for fast and accurate control to prevent overheating, reducing the risk of thermal failure and improving operational reliability.
Implementation Method 1
measuring the voltage between the gate terminal and one of the source and drain terminal while the semiconductor switch is in the turned-on state and determining from the measured voltage and the current from the current source the absolute temperature of the semiconductor switch
Data Source
AI summary
Various embodiments include a circuit arrangement for controlling a power semiconductor switch including a gate terminal, a source terminal, a drain terminal, and a conduction channel between the source and drain terminals, comprising: a controller for generating a control signal to alternate the semiconductor switch between a turned-on state and a turned-off state; a current source for injecting a current into the gate terminal; and an evaluation unit. The evaluation unit measures a voltage between the gate terminal and one of the source terminal and drain terminal while the semiconductor switch is in the turned-on state; and determines from the measured voltage and the current an absolute temperature of the semiconductor switch.