Switchable Patterned Ground Shielding for Variable Inductance
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor devices with inductors face challenges in achieving variable inductance and forming RF chokes effectively, particularly in 3D integrated circuits, due to limitations in patterned ground shielding configurations and switch configurations that affect frequency isolation and inductor behavior.
Innovation Solution
A semiconductor device incorporating a patterned ground shielding (PGS) with strategically placed inductors and switches, where the switches are configured to couple portions of the PGS to alter the inductance and frequency isolation, utilizing conductive elements and dielectric layers to optimize the behavior of inductors and transformers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a patterned ground shielding (PGS) is used in semiconductor devices, then frequency isolation and inductor behavior are improved, but device complexity increases due to strategic placement of inductors and switches
Solution Approach 1:
The ground shielding is segmented into a patterned configuration rather than a continuous structure. This segmentation allows different regions of the PGS to independently control electromagnetic fields at different frequencies, improving frequency isolation while managing device complexity through structured division
Solution Approach 2:
Switches are integrated into the PGS structure to dynamically reconfigure the ground shielding pattern. This dynamic capability allows the device to adapt the PGS configuration for optimal performance at different operating frequencies, enhancing frequency isolation while the switches manage the complexity through automated reconfiguration
2Adaptability or versatility
If switches are configured to couple portions of the PGS, then variable inductance is achieved, but manufacturing precision requirements increase
Solution Approach 1:
The inductors are configured in a vertical stack arrangement rather than a planar layout. This three-dimensional configuration allows switches to couple PGS portions along the vertical dimension, achieving variable inductance through height-based routing that reduces sensitivity to lateral manufacturing variations
Solution Approach 2:
The inductance is varied by changing the coupling state of PGS portions through the switches. This parameter-based control allows continuous adjustment of inductance values by selectively connecting different PGS segments, achieving versatility while the standardized switch structures manage manufacturing precision requirements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables variable inductance and effective frequency isolation, addressing process variations and improving the performance of inductors and transformers in semiconductor devices, particularly in 3D integrated circuits.
Implementation Method 1
a patterned ground shielding (PGS) situated between the first inductor and the second inductor
Implementation Method 2
a first switch configured to couple a first portion of the PGS to a second portion of the PGS
Data Source
AI summary
Semiconductor devices and methods of formation are provided herein. A semiconductor device includes a first inductor, a patterned ground shielding (PGS) proximate the first inductor comprising one or more portions and a first switch configured to couple a first portion of the PGS to a second portion of the PGS. The semiconductor device also has a configuration including a first inductor on a first side of the PGS, a second inductor on a second side of the PGS and a first switch configured to couple a first portion of the PGS to a second portion of the PGS. Selective coupling of portions of the PGS by activating or deactivating switches alters the behavior of the first inductor, or the behavior and interaction between the first inductor and the second inductor. A mechanism is thus provided for selectively configuring a PGS to control inductive or other properties of a circuit.