Switching Device Connection Region Reduces Forward Voltage Drop
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing switching devices have a high forward voltage drop in their p-n diodes, leading to significant losses when current flows through them, which is not efficiently addressed by current technologies.
Innovation Solution
The proposed switching device incorporates a connection semiconductor region that extends from one trench to another, increasing the area of the p-n junction and reducing the forward voltage drop by widening the current path, while also using high-temperature ion implantation to minimize crystal defects and enhance manufacturing efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If the p-n diode structure is used in switching devices, then current flow capability is improved, but forward voltage drop increases causing energy loss
Solution Approach 1:
The patent merges multiple p-n junctions by extending the connection semiconductor region to contact multiple second semiconductor regions, creating a combined diode structure that reduces forward voltage drop while maintaining current flow capability
Solution Approach 2:
The connection semiconductor region extends in the depth direction from the body region down to contact the second semiconductor region, utilizing the vertical dimension to increase the effective junction area without increasing lateral footprint, thereby reducing forward voltage drop
2Loss of energy
If the connection semiconductor region is extended to increase p-n junction area, then forward voltage drop is reduced, but device complexity increases
Solution Approach 1:
The connection semiconductor region serves multiple functions: it connects the body region to bottom semiconductor regions for potential control, forms extended p-n junctions for reduced forward voltage drop, and provides structural support, thereby reducing energy loss without proportionally increasing complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration results in a reduced forward voltage drop for the p-n diode, minimizing losses and improving the overall performance of the switching device by stabilizing the potential of bottom semiconductor regions and suppressing electric field concentration.
Implementation Method 1
A p-n junction at an interface between the body region and the second semiconductor region can be used as a p-n diode
Implementation Method 2
When the switching device is turned off, a depletion layer extends from the bottom semiconductor region into the second semiconductor region
Implementation Method 3
using high-temperature ion implantation to minimize crystal defects
Implementation Method 4
By the depletion layer, electric field concentration in the vicinity of the bottom semiconductor region is suppressed
Data Source
AI summary
A switching device includes a semiconductor substrate; first and second trenches; gate insulating layers; and gate electrodes. The semiconductor substrate includes a first semiconductor region of a first conductivity type, a body region of a second conductivity type, a second semiconductor region of the first conductivity type, first and second bottom semiconductor regions of the second conductivity type disposed in areas extending to bottom surfaces of the first and second trenches, and a connection semiconductor region of the second conductivity type extending from the first trench to reach the second trench in a depth range from a depth of a lower end of the body region to a depth of the bottom surfaces of the first and second trenches, the connection semiconductor region contacting the second semiconductor region, and being connected to the body region, and the first and second bottom semiconductor regions.