Power Electronics Switching Device Pressure Contact Assembly
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Solution Overview
Problem
Existing power electronic switching devices face challenges in reducing manufacturing complexity and effort while enhancing performance, reliability, and service life, with a need for improved assembly methods to minimize costs.
Innovation Solution
A power electronic switching device with a substrate, power semiconductor component, connecting device, and pressure device, featuring a non-positive electrically conductive connection instead of a material bond, using a pressure body with a recess and elastomer pressure elements to ensure efficient thermal and electrical conductivity with a thin thermally conductive layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a material bond is used to connect the power semiconductor component to the substrate, then connection strength is improved, but manufacturing complexity and effort increase
Solution Approach 1:
The patent extracts the adhesive bonding step from the manufacturing process by using a pressure device that creates mechanical pressure contact instead. The power semiconductor component is pressed directly onto the substrate with a defined contact pressure, eliminating the need for adhesive materials and the associated bonding process steps.
Solution Approach 2:
The patent replaces the chemical bonding mechanism (adhesive bonding) with a mechanical bonding mechanism (pressure contact). The pressure device applies mechanical pressure to create a stable electrical and thermal connection between the power semiconductor component and the substrate without requiring chemical adhesives.
2Reliability
If adhesive bonding is used to fix the power semiconductor component, then connection reliability is improved, but manufacturing time and cost increase
Solution Approach 1:
The pressure device is designed with a predefined contact pressure and contact area that is optimized in advance. This preliminary design allows the component to be secured to the substrate in a single pressing operation without requiring additional time for adhesive application, spreading, and curing processes.
Solution Approach 2:
The patent changes the bonding parameter from chemical (adhesive properties) to physical (pressure and contact area). By controlling the contact pressure and contact area parameters, the system achieves reliable connections without the time-consuming adhesive curing process.
3Temperature
If a thick thermally conductive layer is used, then heat transfer efficiency is improved, but device complexity and material usage increase
Solution Approach 1:
The patent applies thermal conductivity enhancement locally at the contact interface between the power semiconductor component and the substrate. The pressure device creates a localized high-pressure contact zone with improved thermal conductivity, rather than requiring a thick thermal conductive layer across the entire device.
Solution Approach 2:
The pressure contact interface creates a composite structure where the direct contact between the component and substrate, under high pressure, forms a thermally conductive path that is more efficient than thick thermal paste layers. The system utilizes the inherent thermal conductivity of the materials in direct contact.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces manufacturing complexity, enhances reliability and performance by forming efficient non-positive connections with low contact resistance and effective heat transfer, while minimizing material usage and manufacturing costs.
Implementation Method 1
a non-positive electrically conductive connection is formed between a contact area of a first main area of the power semiconductor component and a first contact area of an associated conductor track of the substrate
Implementation Method 2
efficient thermal and electrical conductivity with a thin thermally conductive layer
Data Source
Figure 1
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AI summary
A switching device is presented comprising a substrate, a power semiconductor device arranged thereon, a connection device, and a pressure device, wherein the substrate has electrically insulated conductor tracks and a power semiconductor device is arranged on one of the conductor tracks, wherein the connection device is designed as a foil composite with an electrically conductive and an electrically insulating foil and thus forms a first and a second main surface, wherein the switching device is internally connected in a circuit-oriented manner by means of the connection device, and wherein a contact surface of the first main surface of the power semiconductor device is force-fit and electrically conductively connected to a first contact surface of an associated conductor track of the substrate.The pressure device comprises a pressure body and a pressure element projecting from it in the direction of the power semiconductor device, wherein the pressure element presses on a first section of the second main surface of the foil composite and this first section is arranged in projection along the normal direction of the power semiconductor device within the surface of the power semiconductor device.