Switching Element Gate Resistance Measurement and Selection

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Solution Overview

Problem

In semiconductor devices with switching elements connected in parallel, variations in gate resistance lead to oscillation and degradation, requiring a method to measure and select appropriate gate resistances after manufacturing to ensure stable operation across different current ratings and models.

Innovation Solution

A switching element design incorporating a substrate with multiple gate pads and resistor portions, allowing for measurement and selection of gate resistances after manufacturing, enabling adaptation to various models and ensuring uniform resistance values across multiple switching elements.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If gate resistances are not controlled uniformly across switching elements, then manufacturing flexibility is improved, but oscillation and degradation occur leading to reduced reliability

Engineering Contradiction:
Improvemanufacturing flexibilityVSAvoidswitching element stability
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

The patent incorporates a gate resistor directly into the switching element structure during the manufacturing process, rather than adding it separately later. This preliminary integration ensures that the gate resistance is uniformly controlled across all switching elements from the outset, preventing oscillation and degradation while maintaining manufacturing flexibility through standardized production processes.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The gate resistor is merged with the switching element structure, forming an integrated component. The resistor is positioned within the switching element's substrate or support structure, combining two previously separate components (switching element and gate resistor) into a single unified device. This merging ensures consistent gate resistance values across all switching elements while simplifying the overall system architecture.

Inventive Principle:
Principle #5Merging (Combining)

2Adaptability or versatility

If the number of switching elements in parallel is changed to adapt to different current ratings, then adaptability to different models is improved, but the optimum gate resistance value changes requiring reconfiguration

Engineering Contradiction:
Improvemodel adaptabilityVSAvoidgate resistance configuration
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent designs the gate resistor with a fixed resistance value that is optimized for a specific configuration of parallel switching elements. When the number of parallel elements changes, the system can select from pre-designed switching element variants with different integrated gate resistance values. This approach allows adaptability to different current ratings while avoiding the complexity of reconfiguring gate resistances, as each variant is manufactured with its optimal resistance value already integrated.

Inventive Principle:
Principle #35Parameter changes

3Ease of manufacture

If gate resistance values vary among switching elements, then ease of manufacture is improved, but switching speed and on-state current value vary causing performance degradation

Engineering Contradiction:
Improveproduction simplicityVSAvoidgate resistance uniformity
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The gate resistor is incorporated into the switching element during the initial manufacturing process using standard fabrication techniques. This preliminary integration ensures that all switching elements produced in a batch have uniformly controlled gate resistance values, eliminating variations that would lead to performance degradation. The standardized production process maintains ease of manufacture while achieving high manufacturing precision for gate resistance uniformity.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS9553084B2Switching element, semiconductor device, and semiconductor device manufacturing method
Publication Date: 2017.01.24 MITSUBISHI ELECTRIC CORP
  • US9553084B2 patent drawing
  • US9553084B2 patent drawing
  • US9553084B2 patent drawing

AI summary

According to the present invention, a switching element includes a substrate, a first gate pad formed on the substrate, a second gate pad formed on the substrate, a first resistor portion formed on the substrate, the first resistor portion connecting the first gate pad and the second gate pad to each other, and a cell region formed on the substrate and connected to the first gate pad. Thus, measurement of the gate resistance value and selection from gate resistances of the switching element can be performed after the completion of the gate-resistor-incorporating-type switching element.