Symmetric Floating Sensing Nodes for Image Sensor Sensitivity Uniformity

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Solution Overview

Problem

CMOS image sensors face challenges in maintaining consistent sensitivity across different chip ray angles, leading to variations in color detection, particularly for long-wavelength light, due to the arrangement of floating sensing nodes relative to the photodiode.

Innovation Solution

The implementation of symmetrically arranged floating sensing nodes adjacent to the photodiode, with a photo gate applying a negative voltage during photocharge transfer, enhances sensitivity uniformity and transfer efficiency by isolating the pixel from adjacent conductivity patterns and optimizing light incidence.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If floating sensing nodes are arranged asymmetrically relative to the photodiode, then device complexity is reduced, but sensitivity uniformity deteriorates causing color detection variations

Engineering Contradiction:
Improvesensing node arrangementVSAvoidsensitivity uniformity
Core Design Contradiction:
Device complexityVSMeasurement precision

Solution Approach 1:

The patent applies asymmetry in reverse - it deliberately creates symmetric arrangement of floating sensing nodes around the photodiode to counteract the asymmetric sensitivity variations caused by chip ray angle. This symmetric configuration ensures that sensitivity differences in particular colors are compensated, resolving the measurement precision issue while maintaining manageable device complexity.

Inventive Principle:
Principle #4Asymmetry

2Productivity

If photo gate is positioned in the light path, then photocharge transfer efficiency is improved, but light absorption by the photo gate increases reducing overall sensitivity

Engineering Contradiction:
Improvephotocharge transfer efficiencyVSAvoidlight detection sensitivity
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent changes the electrical parameter of the photo gate by applying a negative voltage during photocharge transfer. This parameter modification enhances the photocharge transfer efficiency to the floating sensing nodes while the gate remains transparent to light, thus improving productivity without compromising reliability.

Inventive Principle:
Principle #35Parameter changes

3Measurement precision

If multiple sensing nodes are added to compensate sensitivity differences, then measurement precision is improved, but device complexity increases

Engineering Contradiction:
Improvesensitivity compensationVSAvoidsensing node configuration
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent segments the sensing function by separating the photodiode from multiple floating sensing nodes. This segmentation allows the photodiode to convert light to photocharge while multiple sensing nodes independently detect the photocharge, enabling sensitivity compensation through their symmetric arrangement without excessive complexity in the overall structure.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration reduces sensitivity differences for long-wavelength light detection, improves photocharge transfer efficiency, and enhances the lag characteristic of the image sensor, ensuring consistent performance across varying pixel positions.

Implementation Method 1

a photodiode configured to convert an optical signal into photocharge

Methodology Applied
Scientific EffectPhotoelectric conversion: Photoelectric Effect

Implementation Method 2

a photo gate configured to apply a negative voltage to the photodiode when the photocharge is transferred from the photodiode to the at least two sensing nodes

Methodology Applied
Scientific EffectElectric field effect: Electric Field

Data Source

PatentUS8952475B2Pixel, pixel array, and image sensor
Publication Date: 2015.02.10 SAMSUNG ELECTRONICS CO LTD
  • US8952475B2 patent drawing
  • US8952475B2 patent drawing
  • US8952475B2 patent drawing

AI summary

A pixel and pixel array for use in an image sensor are provided. The image sensor includes floating sensing nodes symmetrically arranged with respect to a photodiode in each pixel.