Symmetrical Feed Structure for Substrate Support Etch Uniformity

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Solution Overview

Problem

As critical dimensions of devices shrink, existing substrate processing technologies face challenges in achieving uniform etch rates and dimensions due to asymmetric electrical feed structures, leading to process non-uniformities.

Innovation Solution

A substrate support with a symmetrical electrical feed structure, including a tubular inner conductor, an outer conductor electrically isolated by a dielectric layer, and symmetrically arranged conductors to provide RF, AC, and DC power, which confines and uniformly distributes electric and magnetic fields.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If an asymmetric electrical feed structure is used to provide power to the substrate, then the device complexity is reduced, but the etch rate uniformity and etch dimension uniformity deteriorate due to electromagnetic skew and process non-uniformities

Engineering Contradiction:
Improveelectrical feed structure complexityVSAvoidetch dimension uniformity
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The patent applies asymmetry principle by intentionally designing a symmetric electrical feed structure in an otherwise asymmetric configuration. The symmetric feed structure includes conductors arranged symmetrically about the central axis, which compensates for the asymmetry introduced by the off-axis RF power source, thereby minimizing electromagnetic skew and improving etch uniformity while maintaining practical device complexity

Inventive Principle:
Principle #4Asymmetry

2Manufacturing precision

If a symmetric electrical feed structure is implemented to improve etch uniformity, then the etch rate uniformity and etch dimension uniformity improve, but the device complexity increases due to additional conductors and dielectric layers

Engineering Contradiction:
Improveetch rate uniformityVSAvoidelectrical feed structure complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent applies local quality principle by making only the critical electrical feed components symmetric (the conductors providing RF, AC, and DC power to the substrate), while other parts of the system can remain asymmetric. This localized symmetry approach improves etch uniformity without requiring complete symmetry throughout the entire device, thereby limiting the increase in overall device complexity

Inventive Principle:
Principle #3Local quality

3Stability of the object's composition

If multiple conductors (inner, outer) with dielectric isolation are used to minimize electromagnetic skew, then the electromagnetic field uniformity improves, but the device complexity and manufacturing difficulty increase

Engineering Contradiction:
Improveelectromagnetic field uniformityVSAvoidmanufacturing difficulty
Core Design Contradiction:
Stability of the object's compositionVSEase of manufacture

Solution Approach 1:

The patent applies the nesting principle by placing the inner conductor inside the outer conductor, with the dielectric layer nested between them. This nested configuration creates a coaxial structure that effectively minimizes electromagnetic skew and improves field uniformity. The nested design is more space-efficient and easier to manufacture than separate symmetric conductors, as it reduces the overall footprint and simplifies assembly

Inventive Principle:
Principle #7Nested doll (Nesting)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration improves etch rate and etch dimension uniformity by minimizing electromagnetic skew and ensuring consistent power distribution to the substrate, enhancing processing performance.

Implementation Method 1

an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor

Methodology Applied
Scientific EffectElectrical insulation: Dielectric

Implementation Method 2

confines and uniformly distributes electric and magnetic fields

Methodology Applied
Scientific EffectElectromagnetic field confinement: Electromagnetic Induction

Data Source

PatentUS10770328B2Substrate support with symmetrical feed structure
Publication Date: 2020.09.08 APPLIED MATERIALS INC
  • US10770328B2 patent drawing
  • US10770328B2 patent drawing
  • US10770328B2 patent drawing

AI summary

Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.