Self-Driven Synchronous Rectifier Circuit Using Body Diode Feedback

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Solution Overview

Problem

Conventional synchronous rectifier controllers are complex, expensive, and not easily adaptable for various applications, leading to inefficiencies and potential shoot-through currents due to improper switching responses in power supply systems using MOSFETs as synchronous rectifiers.

Innovation Solution

A simplified control circuit using a MOSFET, BJT, and diode network that senses current flow to synchronize the active switch's turn-on with the desired current direction, reducing voltage drop and power dissipation by allowing current to flow in one direction through the MOSFET, thereby preventing cross-conduction and shoot-through currents.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional synchronous rectifier controllers are used, then switching control is provided, but the controller complexity and cost increase

Engineering Contradiction:
Improveswitching controlVSAvoidcontroller complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The MOSFET's body diode automatically provides current direction sensing and gate drive timing without external control circuitry. The diode's natural conduction characteristics during reverse recovery period inherently generate the required gate drive signal, eliminating the need for complex conventional controllers

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The patent extracts and utilizes the inherent body diode functionality from the MOSFET structure itself to provide the control function, rather than adding a separate complex control circuit. This removes the unnecessary controller complexity while maintaining reliable switching control

Inventive Principle:
Principle #2Taking out (Extraction)

2Loss of energy

If MOSFET is used as synchronous rectifier, then voltage drop and power dissipation are reduced, but improper switching timing causes shoot-through currents

Engineering Contradiction:
Improvepower dissipationVSAvoidshoot-through currents
Core Design Contradiction:
Loss of energyVSObject-affected harmful factors

Solution Approach 1:

The body diode's reverse recovery current serves as automatic feedback that detects the zero-crossing point of the load current. This feedback mechanism precisely times the MOSFET turn-on event to occur exactly when the current transitions, preventing shoot-through currents while maintaining low power dissipation

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The body diode conducts in advance during the reverse recovery period, preparing the current path and generating the gate drive signal before the MOSFET needs to turn on. This preliminary action ensures the MOSFET switches at the correct moment, avoiding harmful shoot-through currents

Inventive Principle:
Principle #10Preliminary action

3Ease of manufacture

If simple controller is used, then manufacturing cost is reduced, but switching response timing may be improper

Engineering Contradiction:
Improvemanufacturing costVSAvoidswitching response timing
Core Design Contradiction:
Ease of manufactureVSLoss of time

Solution Approach 1:

The body diode automatically generates the precise timing signal for MOSFET switching through its natural reverse recovery characteristics, eliminating the need for expensive complex controllers while maintaining accurate switching response timing

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The patent exploits the time-dependent parameter of the body diode's reverse recovery process to generate the correct switching timing. By utilizing the diode's inherent electrical characteristics rather than external control, the system achieves both low cost and precise timing

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The control circuit enhances efficiency and reduces manufacturing costs by providing a self-driven method for MOSFETs in synchronous rectification, ensuring correct timing of gate drive signals and minimizing power losses, making it more versatile and cost-effective compared to conventional designs.

Implementation Method 1

sensing the current flow at the MOSFET's on-state resistance

Methodology Applied
Scientific EffectElectrical Resistance: Electrical Resistance

Implementation Method 2

A cathode side of the diode is connected to the drain of the MOSFET. The method also includes allowing current to flow through the diode but not through the BJT

Methodology Applied
Scientific EffectDiode rectification: Diode

Implementation Method 3

the on-state resistance of a MOSFET has a very low resistance value that provides a low voltage drop when compared to a Schottky diode alone

Methodology Applied
Scientific EffectElectrical Conduction: Conduction (electrical)

Data Source

PatentUS10236783B1Self-driving control circuit for power switches as synchronous rectifier
Publication Date: 2019.03.19 APPLETON GROUP LLC
  • US10236783B1 patent drawing
  • US10236783B1 patent drawing
  • US10236783B1 patent drawing

AI summary

A control circuit that is applicable to power supply systems that use synchronous rectification techniques is described. The control circuit provides a self-driven method of control to an active switch by sensing the current flow over the switch. The control circuit includes a diode, a MOSFET, and a BJT. The control circuit may include a first resistor and a second resistor that are both connected to a voltage source. An anode side of the diode is connected to the first resistor while a cathode side of the diode is connected to a drain of the MOSFET. The second resistor is connected to a collector of the BJT as well as a gate of the MOSFET. A base of the BJT is connected to the first resistor and the anode side of the diode. An emitter of the BJT is coupled to a source of the MOSFET.