T-Coil ESD Protection Node Segmentation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor devices with ESD protection circuits, the miniaturization of CMOS processes leads to increased interconnect resistance and current density, causing voltage stress and potential destruction of the CMOS internal circuit due to ESD current, and the existing impedance matching techniques using T-coils result in complex metal interconnect paths and large areas, which hinder miniaturization and inductance values.
Innovation Solution
The semiconductor device connects two ESD protection elements to different nodes in an inductor of a T-coil, reducing the need for a bridge interconnection, thereby decreasing interconnect length and resistance, and allowing for a higher current density and reduced formation area of the inductor and ESD protection elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the T-coil impedance matching technique is used with ESD protection elements, then impedance matching ability is improved, but the metal interconnect path becomes complex and the area increases
Solution Approach 1:
The patent divides the single ESD protection element into two separate ESD protection elements (first ESD protection element and second ESD protection element) connected to different nodes of the T-coil inductor. This segmentation allows each ESD element to be independently connected through separate, shorter interconnect paths, reducing overall complexity while maintaining impedance matching performance.
Solution Approach 2:
The patent utilizes the spatial dimension by connecting ESD protection elements to different nodes (different positions) of the T-coil inductor structure. This dimensional approach allows for optimized interconnect routing that reduces path length and complexity compared to a single-point connection architecture.
2Reliability
If the T-coil impedance matching technique is used with ESD protection elements, then impedance matching ability is improved, but the formation area increases
Solution Approach 1:
By segmenting the ESD protection function into two separate elements connected to different T-coil nodes, the patent reduces the total interconnect length required. This segmentation enables more compact layout arrangement, thereby reducing the overall formation area while preserving the impedance matching capability.
3Area of moving object
If CMOS process miniaturization is implemented, then device size is reduced, but interconnect resistance and current density increase causing voltage stress
Solution Approach 1:
The patent segments the ESD protection function into two separate elements, which distributes the ESD current handling capability across multiple paths. This segmentation reduces the current density in each individual interconnect while maintaining overall ESD protection effectiveness, thereby reducing voltage stress in miniaturized CMOS devices.
Solution Approach 2:
The patent applies different connection configurations to different parts of the circuit - specifically connecting ESD elements to different nodes of the T-coil with optimized local interconnect paths. This local optimization reduces interconnect resistance and current density in critical areas, addressing voltage stress issues in miniaturized devices.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances ESD protection ability, reduces interconnect resistance, and minimizes the area required for the inductor and ESD protection elements, effectively addressing the challenges of voltage stress and miniaturization in CMOS processes.
Implementation Method 1
The T-coil section 10 has an inductor section 11 and a capacitor CB. The inductor section 11 has inductors L1 and L2. The impedance matching by using the T-coil is a technique for preventing the impedance mismatch, namely cancelling the parasitic capacitance over a wide frequency range.
Data Source
AI summary
A semiconductor device has: a signal pad; a power supply line; a ground line; an inductor section whose one end is connected to the signal pad; a terminating resistor connected between the other end of the inductor section and the power supply line or the ground line. The semiconductor device further has: a first ESD protection element connected to a first node in the inductor section; and a second ESD protection element connected to a second node whose position is different from that of the first node in the inductor section.