T-Shaped Bonding Pad Structure for Reliable Semiconductor Stacking
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Solution Overview
Problem
The reliability of connection structures in stacked semiconductor packages is insufficient, leading to reduced performance due to peeling phenomena between bonding pads and pad seed layers.
Innovation Solution
A semiconductor chip design featuring a through electrode with a 'T' shaped bonding pad and a conformally formed pad seed layer, increasing the contact area and reducing peeling, thereby enhancing structural reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional bonding pad structure is used in stacked semiconductor packages, then the device complexity is reduced, but the reliability of the connection structure deteriorates due to peeling phenomena
Solution Approach 1:
The bonding pad structure transitions from a conventional planar configuration to a three-dimensional T-shaped configuration. The bonding pad extends vertically along the through electrode and horizontally at the top surface, creating multiple contact areas. This dimensional change increases the bonding interface area between the bonding pad and pad seed layer, thereby improving connection reliability and reducing peeling phenomena in stacked semiconductor packages.
Solution Approach 2:
The bonding pad is divided into multiple segments: a vertical portion extending along the through electrode and horizontal portions at the top surface. This segmentation allows the bonding pad to establish multiple contact points with the pad seed layer, distributing mechanical stress and enhancing overall connection reliability while maintaining manageable structural complexity.
2Reliability
If the contact area between bonding pad and pad seed layer is increased, then the structural reliability is improved, but the manufacturing precision requirements increase
Solution Approach 1:
The through electrode is formed first, establishing a vertical reference structure. The bonding pad is then configured to extend along this pre-formed through electrode, using it as a alignment guide. This preliminary action of forming the through electrode provides a natural reference for bonding pad placement, reducing the need for high-precision independent alignment and simplifying the manufacturing process while still achieving increased contact area.
Data Source
AI summary
A semiconductor chip includes a semiconductor substrate having a first surface and a second surface opposite to the first surface. An active layer is disposed in a portion of the semiconductor substrate adjacent to the first surface. A through electrode extends in the semiconductor substrate in a vertical direction. The through electrode has a lower surface connected to the active layer and an upper surface positioned at a level lower than a level of the second surface of the semiconductor substrate. A passivation layer is disposed on the second surface of the semiconductor substrate. A bonding pad is arranged on a portion of the passivation layer and the upper surface of the through electrode. The bonding pad has a cross-section with a âTâ shape in the vertical direction. The bonding pad is connected to the through electrode.